FR2452791B1 - - Google Patents
Info
- Publication number
- FR2452791B1 FR2452791B1 FR7907803A FR7907803A FR2452791B1 FR 2452791 B1 FR2452791 B1 FR 2452791B1 FR 7907803 A FR7907803 A FR 7907803A FR 7907803 A FR7907803 A FR 7907803A FR 2452791 B1 FR2452791 B1 FR 2452791B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7907803A FR2452791A1 (en) | 1979-03-28 | 1979-03-28 | FET with high cut-off frequency - comprising gallium arsenide and aluminium gallium arsenide layers on semi-insulating substrate |
| FR7922301A FR2465317A2 (en) | 1979-03-28 | 1979-09-06 | FIELD EFFECT TRANSISTOR WITH HIGH BREAKAGE FREQUENCY |
| DE8080400343T DE3068161D1 (en) | 1979-03-28 | 1980-03-14 | Field-effect transistor with high cut-off frequency and method of making it |
| EP80400343A EP0017531B1 (en) | 1979-03-28 | 1980-03-14 | Field-effect transistor with high cut-off frequency and method of making it |
| JP4013280A JPS55160473A (en) | 1979-03-28 | 1980-03-28 | Semiconductor device and method of fabricating same |
| US06/353,100 US4471366A (en) | 1979-03-28 | 1982-03-01 | Field effect transistor with high cut-off frequency and process for forming same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7907803A FR2452791A1 (en) | 1979-03-28 | 1979-03-28 | FET with high cut-off frequency - comprising gallium arsenide and aluminium gallium arsenide layers on semi-insulating substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2452791A1 FR2452791A1 (en) | 1980-10-24 |
| FR2452791B1 true FR2452791B1 (en) | 1982-06-04 |
Family
ID=9223666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7907803A Granted FR2452791A1 (en) | 1979-03-28 | 1979-03-28 | FET with high cut-off frequency - comprising gallium arsenide and aluminium gallium arsenide layers on semi-insulating substrate |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2452791A1 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50138776A (en) * | 1974-04-17 | 1975-11-05 |
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1979
- 1979-03-28 FR FR7907803A patent/FR2452791A1/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2452791A1 (en) | 1980-10-24 |