JPS50138776A - - Google Patents
Info
- Publication number
- JPS50138776A JPS50138776A JP4432474A JP4432474A JPS50138776A JP S50138776 A JPS50138776 A JP S50138776A JP 4432474 A JP4432474 A JP 4432474A JP 4432474 A JP4432474 A JP 4432474A JP S50138776 A JPS50138776 A JP S50138776A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4432474A JPS50138776A (en) | 1974-04-17 | 1974-04-17 | |
GB1516775A GB1507701A (en) | 1974-04-17 | 1975-04-14 | Semiconductor devices |
CA224,731A CA1023480A (en) | 1974-04-17 | 1975-04-16 | Junction gate type gaas field-effect transistor and method of forming |
DE19752517049 DE2517049C3 (en) | 1974-04-17 | 1975-04-17 | Junction field effect transistor made of m-V semiconductor material |
FR7511963A FR2268363B1 (en) | 1974-04-17 | 1975-04-17 | |
US05/793,969 US4075652A (en) | 1974-04-17 | 1977-05-05 | Junction gate type gaas field-effect transistor and method of forming |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4432474A JPS50138776A (en) | 1974-04-17 | 1974-04-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS50138776A true JPS50138776A (en) | 1975-11-05 |
Family
ID=12688304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4432474A Pending JPS50138776A (en) | 1974-04-17 | 1974-04-17 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS50138776A (en) |
CA (1) | CA1023480A (en) |
DE (1) | DE2517049C3 (en) |
FR (1) | FR2268363B1 (en) |
GB (1) | GB1507701A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS533776A (en) * | 1976-06-30 | 1978-01-13 | Matsushita Electric Ind Co Ltd | Semiconducotr device and its production |
JPS5342682A (en) * | 1976-09-30 | 1978-04-18 | Matsushita Electric Ind Co Ltd | Junction type field effect transistor and its production |
JPS60110175A (en) * | 1983-08-23 | 1985-06-15 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | Field effect transistor and method of producing same |
JPS63228672A (en) * | 1987-03-18 | 1988-09-22 | Fujitsu Ltd | Compound semiconductor integrated circuit device |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4075651A (en) * | 1976-03-29 | 1978-02-21 | Varian Associates, Inc. | High speed fet employing ternary and quarternary iii-v active layers |
FR2465317A2 (en) * | 1979-03-28 | 1981-03-20 | Thomson Csf | FIELD EFFECT TRANSISTOR WITH HIGH BREAKAGE FREQUENCY |
FR2452791A1 (en) * | 1979-03-28 | 1980-10-24 | Thomson Csf | FET with high cut-off frequency - comprising gallium arsenide and aluminium gallium arsenide layers on semi-insulating substrate |
JPS55153377A (en) * | 1979-05-18 | 1980-11-29 | Matsushita Electronics Corp | Production of semiconductor device |
-
1974
- 1974-04-17 JP JP4432474A patent/JPS50138776A/ja active Pending
-
1975
- 1975-04-14 GB GB1516775A patent/GB1507701A/en not_active Expired
- 1975-04-16 CA CA224,731A patent/CA1023480A/en not_active Expired
- 1975-04-17 DE DE19752517049 patent/DE2517049C3/en not_active Expired
- 1975-04-17 FR FR7511963A patent/FR2268363B1/fr not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS533776A (en) * | 1976-06-30 | 1978-01-13 | Matsushita Electric Ind Co Ltd | Semiconducotr device and its production |
JPS587071B2 (en) * | 1976-06-30 | 1983-02-08 | 松下電器産業株式会社 | Manufacturing method of semiconductor device |
JPS5342682A (en) * | 1976-09-30 | 1978-04-18 | Matsushita Electric Ind Co Ltd | Junction type field effect transistor and its production |
JPS588151B2 (en) * | 1976-09-30 | 1983-02-14 | 松下電器産業株式会社 | Manufacturing method of junction field effect transistor |
JPS60110175A (en) * | 1983-08-23 | 1985-06-15 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | Field effect transistor and method of producing same |
JPS63228672A (en) * | 1987-03-18 | 1988-09-22 | Fujitsu Ltd | Compound semiconductor integrated circuit device |
Also Published As
Publication number | Publication date |
---|---|
FR2268363A1 (en) | 1975-11-14 |
CA1023480A (en) | 1977-12-27 |
DE2517049B2 (en) | 1978-09-14 |
FR2268363B1 (en) | 1978-06-23 |
DE2517049C3 (en) | 1979-05-10 |
DE2517049A1 (en) | 1975-10-30 |
GB1507701A (en) | 1978-04-19 |