GB1134656A - Insulated-gate field effect triode - Google Patents
Insulated-gate field effect triodeInfo
- Publication number
- GB1134656A GB1134656A GB14406/66A GB1440666A GB1134656A GB 1134656 A GB1134656 A GB 1134656A GB 14406/66 A GB14406/66 A GB 14406/66A GB 1440666 A GB1440666 A GB 1440666A GB 1134656 A GB1134656 A GB 1134656A
- Authority
- GB
- United Kingdom
- Prior art keywords
- insulator
- gallium phosphide
- wafer
- gallium
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 229910005540 GaP Inorganic materials 0.000 abstract 4
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 4
- 239000012212 insulator Substances 0.000 abstract 4
- 235000012431 wafers Nutrition 0.000 abstract 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 3
- 239000005864 Sulphur Substances 0.000 abstract 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 abstract 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000002178 crystalline material Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
Abstract
1,134,656. Semi-conductor devices. RADIO CORPORATION OF AMERICA. 31 March, 1966 [15 April, 1965], No. 14406/66. Heading H1K. In an insulated-gate FET comprising a body of single crystal bandgap material, the gate insulation comprises a crystalline material having an average atomic spacing between 0À9 and 1À1 times that of the body material. The insulator should have a conductance less than 10<SP>-3</SP> times that of the body and a bandgap of at least 1À1 eV. and at least 0À4 eV. greater than that of the body. N-type source and drain regions (25, 27) are produced in a wafer (23) of gallium arsenide by masking the surface and heating in sulphur vapour, Fig. 5B (not shown). The surface is then remasked and again heated in sulphur vapour to produce an N-type channel region (31), Fig. 5C (not shown). An epitaxial layer (29) of pure gallium phosphide is grown by a halogen or oxygen transport technique, Fig. 5D (not shown), and a degenerate gallium phosphide layer (33) is deposited by using a source heavily doped with tellurium or by adding sulphur to the hydrogen ambient. These two layers serve as the gate insulation and gate electrode respectively. The gallium phosphide layers are then masked and etched to expose parts of the source and drain regions which are contacted by means of lead wires or evaporated gold layers (35, 37), Fig. 5E (not shown). Gallium phosphide may also be used as the insulator on a silicon wafer, and gallium arsenide may be used as the insulator on wafers of germanium, indium arsenide and indium antimonide. The insulator may be polycrystalline. The body may be provided with a contact and biased with either D.C. or A.C., and if the body is thin and resistive an auxiliary gate electrode may be applied to the lower face of the wafer.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US448506A US3355637A (en) | 1965-04-15 | 1965-04-15 | Insulated-gate field effect triode with an insulator having the same atomic spacing as the channel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1134656A true GB1134656A (en) | 1968-11-27 |
Family
ID=23780562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB14406/66A Expired GB1134656A (en) | 1965-04-15 | 1966-03-31 | Insulated-gate field effect triode |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3355637A (en) |
| JP (1) | JPS497390B1 (en) |
| DE (1) | DE1564524A1 (en) |
| ES (1) | ES325504A1 (en) |
| GB (1) | GB1134656A (en) |
| NL (1) | NL6605087A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2258344A (en) * | 1991-07-29 | 1993-02-03 | Hitachi Europ Ltd | Lt-gaas semiconductor device |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3544399A (en) * | 1966-10-26 | 1970-12-01 | Hughes Aircraft Co | Insulated gate field-effect transistor (igfet) with semiconductor gate electrode |
| US3475234A (en) * | 1967-03-27 | 1969-10-28 | Bell Telephone Labor Inc | Method for making mis structures |
| US3576478A (en) * | 1969-07-22 | 1971-04-27 | Philco Ford Corp | Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode |
| BE756782A (en) * | 1969-10-03 | 1971-03-01 | Western Electric Co | MEMORY BODY HAVING A STRUCTURE CONTAINING TWO INSULATING LAYERS BETWEEN A SEMICONDUCTOR AND A METAL LAYER |
| US3673471A (en) * | 1970-10-08 | 1972-06-27 | Fairchild Camera Instr Co | Doped semiconductor electrodes for mos type devices |
| US4032950A (en) * | 1974-12-06 | 1977-06-28 | Hughes Aircraft Company | Liquid phase epitaxial process for growing semi-insulating gaas layers |
| DE3174485D1 (en) * | 1980-12-23 | 1986-05-28 | Nat Res Dev | Field effect transistors |
| US6949443B2 (en) * | 2003-10-10 | 2005-09-27 | Taiwan Semiconductor Manufacturing Company | High performance semiconductor devices fabricated with strain-induced processes and methods for making same |
| JP6290342B1 (en) | 2016-09-07 | 2018-03-07 | Ntn株式会社 | Control device for left and right wheel drive device |
| JP6328721B2 (en) | 2016-10-12 | 2018-05-23 | Ntn株式会社 | Drive source control device and vehicle equipped with the drive source control device |
| WO2021075415A1 (en) | 2019-10-16 | 2021-04-22 | 三菱自動車工業株式会社 | Motor control device for electric vehicle |
| JP1693553S (en) * | 2021-04-09 | 2021-08-23 | ||
| JP1693552S (en) * | 2021-04-09 | 2021-08-23 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3263095A (en) * | 1963-12-26 | 1966-07-26 | Ibm | Heterojunction surface channel transistors |
-
1965
- 1965-04-15 US US448506A patent/US3355637A/en not_active Expired - Lifetime
-
1966
- 1966-03-31 GB GB14406/66A patent/GB1134656A/en not_active Expired
- 1966-04-05 DE DE19661564524 patent/DE1564524A1/en active Pending
- 1966-04-13 ES ES0325504A patent/ES325504A1/en not_active Expired
- 1966-04-15 NL NL6605087A patent/NL6605087A/xx unknown
- 1966-04-15 JP JP41023847A patent/JPS497390B1/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2258344A (en) * | 1991-07-29 | 1993-02-03 | Hitachi Europ Ltd | Lt-gaas semiconductor device |
| GB2258344B (en) * | 1991-07-29 | 1995-07-12 | Hitachi Europ Ltd | LT-GaAs semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| US3355637A (en) | 1967-11-28 |
| NL6605087A (en) | 1966-10-17 |
| JPS497390B1 (en) | 1974-02-20 |
| DE1564524B2 (en) | 1970-11-12 |
| DE1564524A1 (en) | 1970-01-22 |
| ES325504A1 (en) | 1967-02-16 |
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