JPS497390B1 - - Google Patents

Info

Publication number
JPS497390B1
JPS497390B1 JP41023847A JP2384766A JPS497390B1 JP S497390 B1 JPS497390 B1 JP S497390B1 JP 41023847 A JP41023847 A JP 41023847A JP 2384766 A JP2384766 A JP 2384766A JP S497390 B1 JPS497390 B1 JP S497390B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP41023847A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS497390B1 publication Critical patent/JPS497390B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
JP41023847A 1965-04-15 1966-04-15 Pending JPS497390B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US448506A US3355637A (en) 1965-04-15 1965-04-15 Insulated-gate field effect triode with an insulator having the same atomic spacing as the channel

Publications (1)

Publication Number Publication Date
JPS497390B1 true JPS497390B1 (ja) 1974-02-20

Family

ID=23780562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP41023847A Pending JPS497390B1 (ja) 1965-04-15 1966-04-15

Country Status (6)

Country Link
US (1) US3355637A (ja)
JP (1) JPS497390B1 (ja)
DE (1) DE1564524A1 (ja)
ES (1) ES325504A1 (ja)
GB (1) GB1134656A (ja)
NL (1) NL6605087A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018070353A1 (ja) 2016-10-12 2018-04-19 Ntn株式会社 駆動源制御装置およびこの駆動源制御装置を備えた車両
WO2021075415A1 (ja) 2019-10-16 2021-04-22 三菱自動車工業株式会社 電動車両のモータ制御装置
US11110805B2 (en) 2016-09-07 2021-09-07 Ntn Corporation Control device for left and right wheel drive device
US12090945B2 (en) 2019-12-24 2024-09-17 Ts Tech Co., Ltd. Vehicle seat

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3544399A (en) * 1966-10-26 1970-12-01 Hughes Aircraft Co Insulated gate field-effect transistor (igfet) with semiconductor gate electrode
US3475234A (en) * 1967-03-27 1969-10-28 Bell Telephone Labor Inc Method for making mis structures
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
BE756782A (fr) * 1969-10-03 1971-03-01 Western Electric Co Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal
US3673471A (en) * 1970-10-08 1972-06-27 Fairchild Camera Instr Co Doped semiconductor electrodes for mos type devices
US4032950A (en) * 1974-12-06 1977-06-28 Hughes Aircraft Company Liquid phase epitaxial process for growing semi-insulating gaas layers
DE3174485D1 (en) * 1980-12-23 1986-05-28 Nat Res Dev Field effect transistors
GB9116341D0 (en) * 1991-07-29 1991-09-11 Hitachi Europ Ltd Lt-gaas semiconductor device
US6949443B2 (en) * 2003-10-10 2005-09-27 Taiwan Semiconductor Manufacturing Company High performance semiconductor devices fabricated with strain-induced processes and methods for making same
JP1693552S (ja) * 2021-04-09 2021-08-23
JP1693553S (ja) * 2021-04-09 2021-08-23

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3263095A (en) * 1963-12-26 1966-07-26 Ibm Heterojunction surface channel transistors

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11110805B2 (en) 2016-09-07 2021-09-07 Ntn Corporation Control device for left and right wheel drive device
WO2018070353A1 (ja) 2016-10-12 2018-04-19 Ntn株式会社 駆動源制御装置およびこの駆動源制御装置を備えた車両
US10773599B2 (en) 2016-10-12 2020-09-15 Ntn Corporation Drive source control device, and vehicle equipped with said drive source control device
WO2021075415A1 (ja) 2019-10-16 2021-04-22 三菱自動車工業株式会社 電動車両のモータ制御装置
US12090945B2 (en) 2019-12-24 2024-09-17 Ts Tech Co., Ltd. Vehicle seat

Also Published As

Publication number Publication date
US3355637A (en) 1967-11-28
DE1564524B2 (ja) 1970-11-12
GB1134656A (en) 1968-11-27
ES325504A1 (es) 1967-02-16
NL6605087A (ja) 1966-10-17
DE1564524A1 (de) 1970-01-22

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