BE756782A - Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal - Google Patents
Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metalInfo
- Publication number
- BE756782A BE756782A BE756782DA BE756782A BE 756782 A BE756782 A BE 756782A BE 756782D A BE756782D A BE 756782DA BE 756782 A BE756782 A BE 756782A
- Authority
- BE
- Belgium
- Prior art keywords
- semiconductor
- metal layer
- insulating layers
- structure containing
- memory body
- Prior art date
Links
- 239000002184 metal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US86366369A | 1969-10-03 | 1969-10-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE756782A true BE756782A (fr) | 1971-03-01 |
Family
ID=25341528
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE756782D BE756782A (fr) | 1969-10-03 | Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal |
Country Status (5)
Country | Link |
---|---|
US (1) | US3604988A (fr) |
BE (1) | BE756782A (fr) |
DE (1) | DE2048020A1 (fr) |
FR (1) | FR2064120A1 (fr) |
NL (1) | NL7014301A (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3758797A (en) * | 1971-07-07 | 1973-09-11 | Signetics Corp | Solid state bistable switching device and method |
US3877054A (en) * | 1973-03-01 | 1975-04-08 | Bell Telephone Labor Inc | Semiconductor memory apparatus with a multilayer insulator contacting the semiconductor |
US4127900A (en) * | 1976-10-29 | 1978-11-28 | Massachusetts Institute Of Technology | Reading capacitor memories with a variable voltage ramp |
US4384299A (en) * | 1976-10-29 | 1983-05-17 | Massachusetts Institute Of Technology | Capacitor memory and methods for reading, writing, and fabricating capacitor memories |
US4104675A (en) * | 1977-06-21 | 1978-08-01 | International Business Machines Corporation | Moderate field hole and electron injection from one interface of MIM or MIS structures |
JPS5656677A (en) * | 1979-10-13 | 1981-05-18 | Toshiba Corp | Semiconductor memory device |
SU1005223A1 (ru) * | 1980-05-16 | 1983-03-15 | Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср | Полупроводниковое запоминающее устройство |
JP4657813B2 (ja) * | 2005-05-31 | 2011-03-23 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL282170A (fr) * | 1961-08-17 | |||
US3355637A (en) * | 1965-04-15 | 1967-11-28 | Rca Corp | Insulated-gate field effect triode with an insulator having the same atomic spacing as the channel |
-
0
- BE BE756782D patent/BE756782A/fr unknown
-
1969
- 1969-10-03 US US863663A patent/US3604988A/en not_active Expired - Lifetime
-
1970
- 1970-09-29 NL NL7014301A patent/NL7014301A/xx unknown
- 1970-09-30 DE DE19702048020 patent/DE2048020A1/de active Pending
- 1970-09-30 FR FR7035343A patent/FR2064120A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
DE2048020A1 (de) | 1971-04-22 |
FR2064120A1 (fr) | 1971-07-16 |
NL7014301A (fr) | 1971-04-06 |
US3604988A (en) | 1971-09-14 |
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