BE756782A - Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal - Google Patents

Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal

Info

Publication number
BE756782A
BE756782A BE756782DA BE756782A BE 756782 A BE756782 A BE 756782A BE 756782D A BE756782D A BE 756782DA BE 756782 A BE756782 A BE 756782A
Authority
BE
Belgium
Prior art keywords
semiconductor
metal layer
insulating layers
structure containing
memory body
Prior art date
Application number
Other languages
English (en)
Inventor
D Kahng
E H Nicollian
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE756782A publication Critical patent/BE756782A/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/792Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
BE756782D 1969-10-03 Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal BE756782A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86366369A 1969-10-03 1969-10-03

Publications (1)

Publication Number Publication Date
BE756782A true BE756782A (fr) 1971-03-01

Family

ID=25341528

Family Applications (1)

Application Number Title Priority Date Filing Date
BE756782D BE756782A (fr) 1969-10-03 Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal

Country Status (5)

Country Link
US (1) US3604988A (fr)
BE (1) BE756782A (fr)
DE (1) DE2048020A1 (fr)
FR (1) FR2064120A1 (fr)
NL (1) NL7014301A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3758797A (en) * 1971-07-07 1973-09-11 Signetics Corp Solid state bistable switching device and method
US3877054A (en) * 1973-03-01 1975-04-08 Bell Telephone Labor Inc Semiconductor memory apparatus with a multilayer insulator contacting the semiconductor
US4127900A (en) * 1976-10-29 1978-11-28 Massachusetts Institute Of Technology Reading capacitor memories with a variable voltage ramp
US4384299A (en) * 1976-10-29 1983-05-17 Massachusetts Institute Of Technology Capacitor memory and methods for reading, writing, and fabricating capacitor memories
US4104675A (en) * 1977-06-21 1978-08-01 International Business Machines Corporation Moderate field hole and electron injection from one interface of MIM or MIS structures
JPS5656677A (en) * 1979-10-13 1981-05-18 Toshiba Corp Semiconductor memory device
SU1005223A1 (ru) * 1980-05-16 1983-03-15 Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср Полупроводниковое запоминающее устройство
JP4657813B2 (ja) * 2005-05-31 2011-03-23 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282170A (fr) * 1961-08-17
US3355637A (en) * 1965-04-15 1967-11-28 Rca Corp Insulated-gate field effect triode with an insulator having the same atomic spacing as the channel

Also Published As

Publication number Publication date
DE2048020A1 (de) 1971-04-22
FR2064120A1 (fr) 1971-07-16
NL7014301A (fr) 1971-04-06
US3604988A (en) 1971-09-14

Similar Documents

Publication Publication Date Title
IT948918B (it) Procedimento per fabbricare circui ti integrati con isolamento ossida to e struttura risultante
GB1348391A (en) Methods of manufacturing semiconductor devices
CH511463A (fr) Couche photoconductrice
BE756782A (fr) Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal
BE761846A (fr) Fabrication de hologramme blanchi
ATA702773A (de) Halbleiterbauelement mit druckkonakt
IT1045429B (it) Perfezionamenti apportati alle boccole di contatto elettrico con fili elastici inclinati nonche ai relativi procedimenti di fabbricazione
IL30464A0 (en) Method of fabricating semiconductor device contact
IT994877B (it) Dispositivo di memoria con ele menti di memoria di riserv
BE793138A (fr) Couche de memoire magneto-optique
HK49476A (en) Method of manufacturing electrically conducting metal layers
AR194683A1 (es) Clavija de contaccto equipable con elementos de construccion electricos y electronicos
BE747377A (fr) Tube enregistreur comportant des diodes isolees et une couche formant resistance
CH507593A (de) Halbleiteranordnung mit einem Halbleiterbauelement, das einen mindestens teilweise mit einer Isolierschicht überzogenen Halbleiterkörper aufweist, in dem ein Feldeffekttransistor mit isolierter Torelektrode angeordnet ist
IT968835B (it) Circuito logico in particolare decodificatore con elementi ridondanti
CH520403A (de) Halbleiterbauelement mit Druckkontakten
IL36479A0 (en) Electrical resistance element and its fabrication
NL147884B (nl) Werkwijze voor de vervaardiging van halfgeleiderinrichtingen met een vlak systeem van een of meer geleidende en isolerende lagen.
CH526859A (de) Bistabiles Halbleiterbauelement
BE763522A (fr) Serie de couches de contact pour des elements de construction semi-conducteurs
NL169123C (nl) Halfgeleiderinrichting bestaande uit een halfgeleiderlichaam met een zwaar gedoteerd contactgebied, dat door een ringvormig gebied van het halfgeleiderlichaam en het contactgebied tegengestelde geleidingstype wordt omsloten.
BE761234A (fr) Robinets et leur fabrication
CA920722A (en) Formation of openings in insulating layers in mos semiconductor devices
DK150980C (da) Elektrisk porcelaensisolator og fremgangsmaade til dens fremstilling
BE767157A (fr) Panneau de construction prefabrique a plusieurs couches et son procede de fabrication