BE763522A - Serie de couches de contact pour des elements de construction semi-conducteurs - Google Patents

Serie de couches de contact pour des elements de construction semi-conducteurs

Info

Publication number
BE763522A
BE763522A BE763522A BE763522A BE763522A BE 763522 A BE763522 A BE 763522A BE 763522 A BE763522 A BE 763522A BE 763522 A BE763522 A BE 763522A BE 763522 A BE763522 A BE 763522A
Authority
BE
Belgium
Prior art keywords
series
contact layers
construction elements
semiconductor construction
semiconductor
Prior art date
Application number
BE763522A
Other languages
English (en)
Original Assignee
Licentia Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19702009863 external-priority patent/DE2009863C3/de
Application filed by Licentia Gmbh filed Critical Licentia Gmbh
Publication of BE763522A publication Critical patent/BE763522A/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Manufacture Of Switches (AREA)
  • Contacts (AREA)
BE763522A 1970-03-03 1971-02-26 Serie de couches de contact pour des elements de construction semi-conducteurs BE763522A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702009863 DE2009863C3 (de) 1970-03-03 Nichtsperrender Kontakt aus mehreren Schichten für Silizium-Halbleiterbauelemente

Publications (1)

Publication Number Publication Date
BE763522A true BE763522A (fr) 1971-07-16

Family

ID=5763893

Family Applications (1)

Application Number Title Priority Date Filing Date
BE763522A BE763522A (fr) 1970-03-03 1971-02-26 Serie de couches de contact pour des elements de construction semi-conducteurs

Country Status (4)

Country Link
US (1) US3706015A (fr)
BE (1) BE763522A (fr)
FR (1) FR2081661B1 (fr)
GB (1) GB1341124A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4042954A (en) * 1975-05-19 1977-08-16 National Semiconductor Corporation Method for forming gang bonding bumps on integrated circuit semiconductor devices
JPS5287360A (en) * 1976-01-16 1977-07-21 Nec Home Electronics Ltd Semiconductor device
US4290079A (en) * 1979-06-29 1981-09-15 International Business Machines Corporation Improved solder interconnection between a semiconductor device and a supporting substrate
US4360142A (en) * 1979-06-29 1982-11-23 International Business Machines Corporation Method of forming a solder interconnection capable of sustained high power levels between a semiconductor device and a supporting substrate
US4737839A (en) * 1984-03-19 1988-04-12 Trilogy Computer Development Partners, Ltd. Semiconductor chip mounting system
US4954870A (en) * 1984-12-28 1990-09-04 Kabushiki Kaisha Toshiba Semiconductor device
DE4139908A1 (de) * 1991-12-04 1993-06-09 Robert Bosch Gmbh, 7000 Stuttgart, De Halbleiteranordnung mit metallschichtsystem sowie verfahren zur herstellung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436614A (en) * 1965-04-20 1969-04-01 Nippon Telegraph & Telephone Nonrectifying laminated ohmic contact for semiconductors consisting of chromium and 80% nickel
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
GB1263381A (en) * 1968-05-17 1972-02-09 Texas Instruments Inc Metal contact and interconnection system for nonhermetic enclosed semiconductor devices
US3599060A (en) * 1968-11-25 1971-08-10 Gen Electric A multilayer metal contact for semiconductor device

Also Published As

Publication number Publication date
DE2009863B2 (de) 1977-05-05
US3706015A (en) 1972-12-12
FR2081661A1 (fr) 1971-12-10
DE2009863A1 (de) 1971-09-30
GB1341124A (en) 1973-12-19
FR2081661B1 (fr) 1977-01-28

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