GB1263381A - Metal contact and interconnection system for nonhermetic enclosed semiconductor devices - Google Patents

Metal contact and interconnection system for nonhermetic enclosed semiconductor devices

Info

Publication number
GB1263381A
GB1263381A GB2223569A GB2223569A GB1263381A GB 1263381 A GB1263381 A GB 1263381A GB 2223569 A GB2223569 A GB 2223569A GB 2223569 A GB2223569 A GB 2223569A GB 1263381 A GB1263381 A GB 1263381A
Authority
GB
United Kingdom
Prior art keywords
layer
molybdenum
titanium
connections
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2223569A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1263381A publication Critical patent/GB1263381A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

1,263,381. Semi-conductor devices. TEXAS INSTRUMENTS Inc. 1 May, 1969 [17 May, 1968], No. 22235/69. Heading H1K. [Also in Division C7] A contact layer in ohmic connection with a region of a semi-conductor body comprises a layer of molybdenum containing a homogeneously distributed additive comprising from 3-60% by weight of the layer which additive increases its resistance to corrosion in moist environments. The specified additives in order of preference are titanium, tantalum, chromium, zirconium, hafnium and silicon. For good ohmic contact the contacted regions should be highly doped, e.g. with > 2 x 10<SP>19</SP> atoms cm.<SP>-3</SP> of boron or phosphorus introduced if necessary in an auxiliary diffusion step. Alternatively the surface can be thinly coated with aluminium or with platinum which is sintered to form a platinum silicide layer. Typically electrodes with bonding pads are formed on a planar oxidepassivated transistor element by RF sputtering in a low pressure argon atmosphere from a cathode fabricated from titanium and molybdenum powder to form an overall layer 2500 Š thick which is covered with a 10,000 Š layer of gold deposited in the same sputtering apparatus or by evaporation. The electrode pattern is formed by photoresist masking and etching steps using specified etchants. The element is finally mounted on the central one of parallelstrips, with gold wire emitter and base connections to the outer strips, and potted in plastics by a transfer moulding process. Part of an integrated circuit consisting of a number of interconnected sub-circuits each as in Fig. 9 (not shown) is seen in Fig. 12 with two layers of interconnections forming respectively the internal connections of the sub-circuits and the connections between them. The first layer of interconnections are form etched from an overall layer 116, 117, 118 consisting of 7500 Š of gold or copper sandwiched between 1200 Š layers of molybdenum or molybdenum-titanium. A 20,000 Š layer 119 of silicon oxide, or of silicon nitride, alumina or organic insulator is then formed by evaporation or sputtering and selectively etched to expose parts of the interconnection pattern to be contacted. Molybdenum is then removed from these parts V prior to deposition of an overall 1200 Š thick layer 120 of molybdenum-titanium and a 7500 Š overlayer 121 of gold. These layers are next patternetched to form the intercircuit connections and wires thermocompression bonded to the terminal points of the completed circuit.
GB2223569A 1968-05-17 1969-05-01 Metal contact and interconnection system for nonhermetic enclosed semiconductor devices Expired GB1263381A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US73004768A 1968-05-17 1968-05-17
US72998568A 1968-05-17 1968-05-17

Publications (1)

Publication Number Publication Date
GB1263381A true GB1263381A (en) 1972-02-09

Family

ID=27111970

Family Applications (2)

Application Number Title Priority Date Filing Date
GB2223569A Expired GB1263381A (en) 1968-05-17 1969-05-01 Metal contact and interconnection system for nonhermetic enclosed semiconductor devices
GB1265896D Expired GB1265896A (en) 1968-05-17 1969-05-08

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB1265896D Expired GB1265896A (en) 1968-05-17 1969-05-08

Country Status (4)

Country Link
DE (2) DE1923253A1 (en)
FR (2) FR2011844B1 (en)
GB (2) GB1263381A (en)
NL (2) NL163065C (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE763522A (en) * 1970-03-03 1971-07-16 Licentia Gmbh SERIES OF CONTACT LAYERS FOR SEMICONDUCTOR CONSTRUCTION ELEMENTS
US4166279A (en) * 1977-12-30 1979-08-28 International Business Machines Corporation Electromigration resistance in gold thin film conductors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL134170C (en) * 1963-12-17 1900-01-01
US3368113A (en) * 1965-06-28 1968-02-06 Westinghouse Electric Corp Integrated circuit structures, and method of making same, including a dielectric medium for internal isolation
DE1283970B (en) * 1966-03-19 1968-11-28 Siemens Ag Metallic contact on a semiconductor component
NL6706641A (en) * 1966-11-07 1968-11-13

Also Published As

Publication number Publication date
FR2011844B1 (en) 1973-07-13
DE1924845B2 (en) 1978-03-09
FR2011844A1 (en) 1970-03-13
NL6907539A (en) 1969-11-19
NL163065C (en) 1980-07-15
DE1924845A1 (en) 1969-11-27
NL163065B (en) 1980-02-15
GB1265896A (en) 1972-03-08
DE1924845C3 (en) 1978-11-16
FR2008771B1 (en) 1973-08-10
NL6907540A (en) 1969-11-19
FR2008771A1 (en) 1970-01-23
DE1923253A1 (en) 1969-12-11

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