CH513518A - Zweiwegthyristor - Google Patents

Zweiwegthyristor

Info

Publication number
CH513518A
CH513518A CH506570A CH506570A CH513518A CH 513518 A CH513518 A CH 513518A CH 506570 A CH506570 A CH 506570A CH 506570 A CH506570 A CH 506570A CH 513518 A CH513518 A CH 513518A
Authority
CH
Switzerland
Prior art keywords
way thyristor
thyristor
way
Prior art date
Application number
CH506570A
Other languages
English (en)
Inventor
Foster Alan
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH513518A publication Critical patent/CH513518A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
CH506570A 1970-02-27 1970-04-06 Zweiwegthyristor CH513518A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9723/70A GB1301193A (en) 1970-02-27 1970-02-27 Improvements in semiconductor devices

Publications (1)

Publication Number Publication Date
CH513518A true CH513518A (de) 1971-09-30

Family

ID=9877527

Family Applications (1)

Application Number Title Priority Date Filing Date
CH506570A CH513518A (de) 1970-02-27 1970-04-06 Zweiwegthyristor

Country Status (7)

Country Link
US (1) US3696273A (de)
JP (1) JPS553830B1 (de)
CH (1) CH513518A (de)
DE (1) DE2016738B2 (de)
FR (1) FR2080794B1 (de)
GB (1) GB1301193A (de)
SE (1) SE378155B (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2169904A1 (de) * 1971-12-29 1973-09-14 Transistor Ag
FR2556881A1 (fr) * 1983-12-14 1985-06-21 Silicium Semiconducteur Ssc Triac a double gachette centrale
FR2585882A1 (fr) * 1985-07-30 1987-02-06 Thomson Csf Triac desensibilise vis-a-vis des risques de reamorcage a la commutation sur charge reactive

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879744A (en) * 1971-07-06 1975-04-22 Silec Semi Conducteurs Bidirectional thyristor
US3792320A (en) * 1972-05-22 1974-02-12 J Hutson Semiconductor switch devices having improved shorted emitter configurations
US3787719A (en) * 1972-11-10 1974-01-22 Westinghouse Brake & Signal Triac
DE2257394C2 (de) * 1972-11-23 1984-07-19 Westinghouse Brake and Signal Co. Ltd., Chippenham, Wiltshire Zweirichtungs-Thyristortriode
US4032958A (en) * 1972-12-29 1977-06-28 Sony Corporation Semiconductor device
US4130828A (en) * 1975-10-16 1978-12-19 Silec-Semi-Conducteurs Triac structure having improved triggering sensitivity with single groove extending from gate region
DE2636234A1 (de) * 1976-08-12 1978-02-16 Bbc Brown Boveri & Cie Steuerbares halbleiterbauelement fuer zwei stromrichtungen
JPS59132167A (ja) * 1983-01-18 1984-07-30 Toshiba Corp 半導体装置
US6436773B1 (en) * 2001-05-01 2002-08-20 Advanced Micro Devices, Inc. Fabrication of test field effect transistor structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391310A (en) * 1964-01-13 1968-07-02 Gen Electric Semiconductor switch
FR1483998A (de) * 1965-05-14 1967-09-13
GB1053937A (de) * 1965-07-23 1900-01-01
US3504241A (en) * 1967-03-06 1970-03-31 Anatoly Nikolaevich Dumanevich Semiconductor bidirectional switch
DE1764821B1 (de) * 1967-08-25 1971-10-14 Mitsubishi Electric Corp In zwei richtungen schaltbarer thyristor
US3476992A (en) * 1967-12-26 1969-11-04 Westinghouse Electric Corp Geometry of shorted-cathode-emitter for low and high power thyristor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2169904A1 (de) * 1971-12-29 1973-09-14 Transistor Ag
FR2556881A1 (fr) * 1983-12-14 1985-06-21 Silicium Semiconducteur Ssc Triac a double gachette centrale
FR2585882A1 (fr) * 1985-07-30 1987-02-06 Thomson Csf Triac desensibilise vis-a-vis des risques de reamorcage a la commutation sur charge reactive
WO1987000971A1 (fr) * 1985-07-30 1987-02-12 Thomson-Csf Triac desensibilise vis-a-vis des risques de reamorçage a la commutation sur charge reactive

Also Published As

Publication number Publication date
SE378155B (de) 1975-08-18
FR2080794B1 (de) 1974-05-24
US3696273A (en) 1972-10-03
DE2016738B2 (de) 1978-03-09
FR2080794A1 (de) 1971-11-19
GB1301193A (en) 1972-12-29
DE2016738A1 (de) 1971-09-16
JPS553830B1 (de) 1980-01-26

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Legal Events

Date Code Title Description
PL Patent ceased