GB1236689A - Semiconductor devices of voltage controlled type - Google Patents
Semiconductor devices of voltage controlled typeInfo
- Publication number
- GB1236689A GB1236689A GB23853/69A GB2385369A GB1236689A GB 1236689 A GB1236689 A GB 1236689A GB 23853/69 A GB23853/69 A GB 23853/69A GB 2385369 A GB2385369 A GB 2385369A GB 1236689 A GB1236689 A GB 1236689A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrodes
- anode
- etching
- semi
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/10—Gunn-effect devices
- H10N80/107—Gunn diodes
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
1,236,689. Semi-conductor devices. NIPPON ELECTRIC CO. Ltd. 9 May, 1969 [16 May, 1968], No. 23853/69. Heading H1K. In a Gunn-effect device destructive heat development adjacent the anode is prevented by providing a greater cross-section of semiconductor material adjacent the anode than elsewhere in the active region of the device. In Fig. 3 this is achieved by etching a groove in a N-type GaAs layer 13 on a semi-insulating GaAs substrate 12 between the two Au/Ce/Ni electrodes 14, 15. In Fig. 4 the same effect is obtained by etching an N-type GaAs layer of uniform thickness to leave a T-shaped portion 17 between the electrodes 18, 19. The increased cross-section may be provided adjacent both electrodes. A prior art arrangement is described in which N+ + GaAs regions (8, 9), Fig. 2 (not shown), are selectively grown by liquid phase regrowth at each end of an N-type region (6) covered with a SiO 2 layer (7). Metal electrodes (10, 11) are then positioned on the N+ + regions (8, 9).
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3323568 | 1968-05-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1236689A true GB1236689A (en) | 1971-06-23 |
Family
ID=12380777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB23853/69A Expired GB1236689A (en) | 1968-05-16 | 1969-05-09 | Semiconductor devices of voltage controlled type |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1236689A (en) |
-
1969
- 1969-05-09 GB GB23853/69A patent/GB1236689A/en not_active Expired
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |