GB910050A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB910050A
GB910050A GB2395360A GB2395360A GB910050A GB 910050 A GB910050 A GB 910050A GB 2395360 A GB2395360 A GB 2395360A GB 2395360 A GB2395360 A GB 2395360A GB 910050 A GB910050 A GB 910050A
Authority
GB
United Kingdom
Prior art keywords
control current
semi
regions
passing
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2395360A
Inventor
Cyril Francis Drake
Robert Anthony Hyman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB2395360A priority Critical patent/GB910050A/en
Publication of GB910050A publication Critical patent/GB910050A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

910,050. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. July 7, 1961 [July 8, 1960], No. 23953/60. Addition to 910,049. Class 37. In a semi-conductor device having two regions of semi-conductor material separated by regions of opposite conductivity type, the junctions between said regions being of the tunnel diode type, means is provided for passing a control current parallel and adjacent to said junctions. In one embodiment, Fig. 1, the P and N-types form a sandwich, terminals 8 and 9 being provided passing the control current through the N-type material, the controlled current passing between terminals 6, 7. Changes in control current vary the bias along the junction, so varying the areas of negative resistance and hence the characteristics of the device. In a modification, Fig. 2 (not shown), the control current is applied through a region of high resistivity running centrally through the N-type material. The central N-type material may taper from one end, Fig. 4 (not shown), to the other to vary the characteristics of the device. The device may be made of germanium or silicon.
GB2395360A 1960-07-08 1960-07-08 Improvements in or relating to semiconductor devices Expired GB910050A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2395360A GB910050A (en) 1960-07-08 1960-07-08 Improvements in or relating to semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2395360A GB910050A (en) 1960-07-08 1960-07-08 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB910050A true GB910050A (en) 1962-11-07

Family

ID=10204007

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2395360A Expired GB910050A (en) 1960-07-08 1960-07-08 Improvements in or relating to semiconductor devices

Country Status (1)

Country Link
GB (1) GB910050A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3337750A (en) * 1963-05-14 1967-08-22 Comp Generale Electricite Gate-controlled turn-on and turn-off symmetrical semi-conductor switch having single control gate electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3337750A (en) * 1963-05-14 1967-08-22 Comp Generale Electricite Gate-controlled turn-on and turn-off symmetrical semi-conductor switch having single control gate electrode

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