JPS5591848A - Preparation of microwave integrated circuit - Google Patents

Preparation of microwave integrated circuit

Info

Publication number
JPS5591848A
JPS5591848A JP16229978A JP16229978A JPS5591848A JP S5591848 A JPS5591848 A JP S5591848A JP 16229978 A JP16229978 A JP 16229978A JP 16229978 A JP16229978 A JP 16229978A JP S5591848 A JPS5591848 A JP S5591848A
Authority
JP
Japan
Prior art keywords
region
microwave
integrated circuit
impurities
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16229978A
Other languages
Japanese (ja)
Other versions
JPS6239544B2 (en
Inventor
Eiji Yamamura
Masumi Fukuda
Masafumi Shigaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16229978A priority Critical patent/JPS5591848A/en
Publication of JPS5591848A publication Critical patent/JPS5591848A/en
Publication of JPS6239544B2 publication Critical patent/JPS6239544B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To accomplish the ultra-miniaturization of a microwave integrated circuit by a method wherein a microwave active element is formed in a semiconductor epitaxial layer composed of a compound formed in the single crystal portion of a dielectric substrate and a microwave passive element is formed in a semiconductor layer composed of a polycrystalline compound formed on the surface of the substrate or on another side thereof.
CONSTITUTION: A MISFET10 consists of a metal electrode 12 mounted on an insulating film 11; GaAs with the adjusted concentration of impurities; a source region 13 and a drain region 14 with aluminum electrodes 15 and 16, respectively. A resistor 20 formed by the use of the GaAs layer on sapphire is provided with an impurity concentration adjusting region 21 and aluminium electrodes 22, 23. The capacity of a capacitor 30 is determined by a region 31 wherein the concenteation of impurities has been adjusted by the ion injection method to the interior of the semi-insulating GaAs layer 2. Low resisting regions 32 and 33 are provided on the top and bottom surfaces of the region 31 so as to realize an ohmic contact between aluminum electrodes 34 and 35.
COPYRIGHT: (C)1980,JPO&Japio
JP16229978A 1978-12-29 1978-12-29 Preparation of microwave integrated circuit Granted JPS5591848A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16229978A JPS5591848A (en) 1978-12-29 1978-12-29 Preparation of microwave integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16229978A JPS5591848A (en) 1978-12-29 1978-12-29 Preparation of microwave integrated circuit

Publications (2)

Publication Number Publication Date
JPS5591848A true JPS5591848A (en) 1980-07-11
JPS6239544B2 JPS6239544B2 (en) 1987-08-24

Family

ID=15751850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16229978A Granted JPS5591848A (en) 1978-12-29 1978-12-29 Preparation of microwave integrated circuit

Country Status (1)

Country Link
JP (1) JPS5591848A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101501A (en) * 1981-12-14 1983-06-16 Mitsubishi Electric Corp High frequency switch device
JPS6053053A (en) * 1983-07-29 1985-03-26 トムソン−セエスエフ Device for mutually connecting between cells of preplanted ultrasonic wave integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101501A (en) * 1981-12-14 1983-06-16 Mitsubishi Electric Corp High frequency switch device
JPS6053053A (en) * 1983-07-29 1985-03-26 トムソン−セエスエフ Device for mutually connecting between cells of preplanted ultrasonic wave integrated circuit

Also Published As

Publication number Publication date
JPS6239544B2 (en) 1987-08-24

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