JPS5655056A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5655056A
JPS5655056A JP13141779A JP13141779A JPS5655056A JP S5655056 A JPS5655056 A JP S5655056A JP 13141779 A JP13141779 A JP 13141779A JP 13141779 A JP13141779 A JP 13141779A JP S5655056 A JPS5655056 A JP S5655056A
Authority
JP
Japan
Prior art keywords
layer
semiconductor device
aluminum
formation
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13141779A
Other languages
Japanese (ja)
Inventor
Koichiro Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13141779A priority Critical patent/JPS5655056A/en
Publication of JPS5655056A publication Critical patent/JPS5655056A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To prevent the decrease in the withstand voltage of a semiconductor device by forming a passivation insulating film through an alumina layer on the surface of a semiconductor element, thereby avoiding the formation of a modified layer thereon. CONSTITUTION:An N<-> type GaAs layer 2 and an N type GaAs layer 3 are laminated on a semi-insulating GaAs substrate 1, a Schottky gate electrode 6 made of aluminum and source and drain electrodes 4 and 5 of Au-Ge are formed thereon, then aluminum is evaporated on the whole surface, is anodized and is thus formed into an alumina layer 10, and a passivation insulating film 7 of SiO2 layer or the like is formed through the layer 10. Since this eliminates the formation of a modified layer due to the dispersion of Ga in the SiO2 layer, it can improve the electric characteristics, reliability and manufacturing yield of the semiconductor device.
JP13141779A 1979-10-12 1979-10-12 Semiconductor device and manufacture thereof Pending JPS5655056A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13141779A JPS5655056A (en) 1979-10-12 1979-10-12 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13141779A JPS5655056A (en) 1979-10-12 1979-10-12 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5655056A true JPS5655056A (en) 1981-05-15

Family

ID=15057469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13141779A Pending JPS5655056A (en) 1979-10-12 1979-10-12 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5655056A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008035403A1 (en) * 2006-09-20 2008-03-27 Fujitsu Limited Field-effect transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008035403A1 (en) * 2006-09-20 2008-03-27 Fujitsu Limited Field-effect transistor
EP2065925A1 (en) * 2006-09-20 2009-06-03 Fujitsu Limited Field-effect transistor
EP2065925A4 (en) * 2006-09-20 2009-09-02 Fujitsu Ltd Field-effect transistor
US8969919B2 (en) 2006-09-20 2015-03-03 Fujitsu Limited Field-effect transistor

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