JPS5562769A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5562769A JPS5562769A JP10604373A JP10604373A JPS5562769A JP S5562769 A JPS5562769 A JP S5562769A JP 10604373 A JP10604373 A JP 10604373A JP 10604373 A JP10604373 A JP 10604373A JP S5562769 A JPS5562769 A JP S5562769A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio2
- substrate
- approximate
- fets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 230000001939 inductive effect Effects 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain depletion and enhancement type FETs, which are excellently insulated, on the same substrate, by mounting an insulator inducing positive holes onto a surface of a substrate between two FETs that insulating films inducing electrons or the positive holes are installed just under a gate electrode. CONSTITUTION:An n-layer is disposed to a p-type Si substrate, covered with SiO2 in approximate 500Angstrom , opened 18, 19 and coated with Al2O320 in approximate 7000Angstrom . A film 20 of a gate portion, a source portion and a drain electrode portion is opened 21, 22. The film 20 is again coated with Al2O323 in approximate 2000Angstrom , and the Al2O3 film 23 on a SiO2 film 26 is selectively etched and opened 24, 25. When manufacturing Al electrodes 27-29, a depletion type using SiO2 as a gate insulating film and an enhancement type MOSFET employing SiO2 and Al2O3 as gate insulating films are made up. There are thick Al2O320, 23 on the SiO2 film between two FETs, positive holes are induced on a Si substrate and the surface is excellently separated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10604373A JPS5562769A (en) | 1973-09-21 | 1973-09-21 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10604373A JPS5562769A (en) | 1973-09-21 | 1973-09-21 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5562769A true JPS5562769A (en) | 1980-05-12 |
Family
ID=14423595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10604373A Pending JPS5562769A (en) | 1973-09-21 | 1973-09-21 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5562769A (en) |
-
1973
- 1973-09-21 JP JP10604373A patent/JPS5562769A/en active Pending
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