JPS6441274A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6441274A
JPS6441274A JP19761887A JP19761887A JPS6441274A JP S6441274 A JPS6441274 A JP S6441274A JP 19761887 A JP19761887 A JP 19761887A JP 19761887 A JP19761887 A JP 19761887A JP S6441274 A JPS6441274 A JP S6441274A
Authority
JP
Japan
Prior art keywords
gate electrode
electrode
drain
source
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19761887A
Other languages
Japanese (ja)
Inventor
Hiroaki Ishiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19761887A priority Critical patent/JPS6441274A/en
Publication of JPS6441274A publication Critical patent/JPS6441274A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To restrict series resistance and capacitance to small values, increase drain breakdown voltage, and improve RF characteristics, by making the distance between the source and the gate of a GaAsFET smaller than the distance between the source and the drain. CONSTITUTION:After a temporary gate electrode 4 is formed on a GaAs substrate 20 on which an active layer is formed, a silicon oxide film 5 is formed on the side-wall of the gate electrode 4. After an N<+> contact layer 14 is formed for the temporary gate electrode 4 in the self alignment manner, an ohmic electrode composed of a gold-germanium layer 6 and a nickel layer 7 is formed. After the temporary gate electrode 4 is eliminated, a gate electrode 13 and metal turning to the upper layer metal of ohmic electrode are vapor-deposited from oblique direction. Thereby, a gate electrode 13 of off-set structure near from a source electrode 8 and distant from a drain electrode 9 can be obtained. Therefore a GaAsFET having excellent Rf characteristics is obtained, wherein the series resistance and capacitance are small, and the drain breakdown voltage is high.
JP19761887A 1987-08-07 1987-08-07 Manufacture of semiconductor device Pending JPS6441274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19761887A JPS6441274A (en) 1987-08-07 1987-08-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19761887A JPS6441274A (en) 1987-08-07 1987-08-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6441274A true JPS6441274A (en) 1989-02-13

Family

ID=16377473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19761887A Pending JPS6441274A (en) 1987-08-07 1987-08-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6441274A (en)

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