JPS5712570A - Semiconductor photoelectric converter - Google Patents

Semiconductor photoelectric converter

Info

Publication number
JPS5712570A
JPS5712570A JP8730480A JP8730480A JPS5712570A JP S5712570 A JPS5712570 A JP S5712570A JP 8730480 A JP8730480 A JP 8730480A JP 8730480 A JP8730480 A JP 8730480A JP S5712570 A JPS5712570 A JP S5712570A
Authority
JP
Japan
Prior art keywords
electrodes
light
layers
main face
carriers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8730480A
Other languages
Japanese (ja)
Other versions
JPS6259476B2 (en
Inventor
Takeshi Kobayashi
Eiichi Yamaguchi
Masamichi Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP8730480A priority Critical patent/JPS5712570A/en
Publication of JPS5712570A publication Critical patent/JPS5712570A/en
Publication of JPS6259476B2 publication Critical patent/JPS6259476B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a semiconductor photoelectric converter being able to respond in a high speed even to minute light and having a favorable SN ratio by a method wherein two layers having low specific resistance are provided on the main face of a semi-insulating semiconductor substrate, and a transparent electrode is arranged on the main face between the layers interposing an insulating film between them. CONSTITUTION:The N<+> type layers 33, 34 are provided on the semi-insulating InP substrate 31, and the transparent Au electrode 37 is attached on the Al2O3 film 36, an Au-Ge-Ni electrode 39 is on the main face 38, and electrodes 40, 41 of the same material is attached also on the layers 33, 34. An electric power source 51 is connected between the electrodes 40, 41 through a load 52, and an electric power source 53 is connected between the electrodes 37, 40. When light 54 is irradiated to a region 35 in the condition being applied a voltage Vg between the electrodes 37-40, quasi-energy band responding to Vg is transferred to the conductive band side is accordance with light 54, doubling effect of carriers is generated, carriers reach the electrodes 40, 41 through the N<+> type layers 33, 34, and a current responding to strngth of light 54 is supplied to the load 52. Because carriers generated in the region 35 are used as they are, the device responds in a high speed, responds to minute light and no noise is accompanied.
JP8730480A 1980-06-27 1980-06-27 Semiconductor photoelectric converter Granted JPS5712570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8730480A JPS5712570A (en) 1980-06-27 1980-06-27 Semiconductor photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8730480A JPS5712570A (en) 1980-06-27 1980-06-27 Semiconductor photoelectric converter

Publications (2)

Publication Number Publication Date
JPS5712570A true JPS5712570A (en) 1982-01-22
JPS6259476B2 JPS6259476B2 (en) 1987-12-11

Family

ID=13911080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8730480A Granted JPS5712570A (en) 1980-06-27 1980-06-27 Semiconductor photoelectric converter

Country Status (1)

Country Link
JP (1) JPS5712570A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0212120A1 (en) * 1985-06-21 1987-03-04 Itt Industries, Inc. Field effect phototransistor
JPH0362977A (en) * 1989-07-31 1991-03-19 Mitsubishi Electric Corp Long wavelength avalanche photodiode
US5028971A (en) * 1990-06-04 1991-07-02 The United States Of America As Represented By The Secretary Of The Army High power photoconductor bulk GaAs switch
US5596209A (en) * 1994-05-09 1997-01-21 Lockheed Sanders, Inc. Photoconductive semiconductor control device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51285A (en) * 1974-06-19 1976-01-05 Matsushita Electric Ind Co Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51285A (en) * 1974-06-19 1976-01-05 Matsushita Electric Ind Co Ltd

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0212120A1 (en) * 1985-06-21 1987-03-04 Itt Industries, Inc. Field effect phototransistor
JPH0362977A (en) * 1989-07-31 1991-03-19 Mitsubishi Electric Corp Long wavelength avalanche photodiode
US5028971A (en) * 1990-06-04 1991-07-02 The United States Of America As Represented By The Secretary Of The Army High power photoconductor bulk GaAs switch
US5596209A (en) * 1994-05-09 1997-01-21 Lockheed Sanders, Inc. Photoconductive semiconductor control device

Also Published As

Publication number Publication date
JPS6259476B2 (en) 1987-12-11

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