JPS575376A - Semiconductor photoreceiving element - Google Patents
Semiconductor photoreceiving elementInfo
- Publication number
- JPS575376A JPS575376A JP8000180A JP8000180A JPS575376A JP S575376 A JPS575376 A JP S575376A JP 8000180 A JP8000180 A JP 8000180A JP 8000180 A JP8000180 A JP 8000180A JP S575376 A JPS575376 A JP S575376A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- layer
- depletion
- depletion layer
- magnifying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000005684 electric field Effects 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
- 230000004043 responsiveness Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To perform the high magnification, low dark current and high speed responsiveness of a semiconductor photoreceiving element by forming an avalanche phenomenon uniformly on the overall surface of a magnifying P-N junction and eliminating the avalenche phenomenon in the guard ring P-N junction. CONSTITUTION:Positive and negative voltages are respectively applied to electrodes 81, 82. P-N junctions 52, 53 are formed between the high density P type regions 42, 43 and the medium density N type region 41, and a depletion layer is formed adjacent to the P-N junctions 52, 53. The spread of a depletion layer in a light absorption layer 31 contacting with the guard ring P-N junction 53 is larger than that of the depletion layer in the layer 31 contacting with the magnifying P-N junction 52. An electric field intensity is increased in the short distance region between the depletion limits, and is broken down by the application of the low bias voltage thereto.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8000180A JPS575376A (en) | 1980-06-13 | 1980-06-13 | Semiconductor photoreceiving element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8000180A JPS575376A (en) | 1980-06-13 | 1980-06-13 | Semiconductor photoreceiving element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS575376A true JPS575376A (en) | 1982-01-12 |
Family
ID=13706074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8000180A Pending JPS575376A (en) | 1980-06-13 | 1980-06-13 | Semiconductor photoreceiving element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS575376A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60254674A (en) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | Semiconductor photo receptor |
US11084297B2 (en) | 2016-07-11 | 2021-08-10 | Seiko Epson Corporation | Liquid supply device and liquid ejecting apparatus |
-
1980
- 1980-06-13 JP JP8000180A patent/JPS575376A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60254674A (en) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | Semiconductor photo receptor |
US11084297B2 (en) | 2016-07-11 | 2021-08-10 | Seiko Epson Corporation | Liquid supply device and liquid ejecting apparatus |
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