JPS575376A - Semiconductor photoreceiving element - Google Patents

Semiconductor photoreceiving element

Info

Publication number
JPS575376A
JPS575376A JP8000180A JP8000180A JPS575376A JP S575376 A JPS575376 A JP S575376A JP 8000180 A JP8000180 A JP 8000180A JP 8000180 A JP8000180 A JP 8000180A JP S575376 A JPS575376 A JP S575376A
Authority
JP
Japan
Prior art keywords
junction
layer
depletion
depletion layer
magnifying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8000180A
Other languages
Japanese (ja)
Inventor
Fukunobu Aisaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8000180A priority Critical patent/JPS575376A/en
Publication of JPS575376A publication Critical patent/JPS575376A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To perform the high magnification, low dark current and high speed responsiveness of a semiconductor photoreceiving element by forming an avalanche phenomenon uniformly on the overall surface of a magnifying P-N junction and eliminating the avalenche phenomenon in the guard ring P-N junction. CONSTITUTION:Positive and negative voltages are respectively applied to electrodes 81, 82. P-N junctions 52, 53 are formed between the high density P type regions 42, 43 and the medium density N type region 41, and a depletion layer is formed adjacent to the P-N junctions 52, 53. The spread of a depletion layer in a light absorption layer 31 contacting with the guard ring P-N junction 53 is larger than that of the depletion layer in the layer 31 contacting with the magnifying P-N junction 52. An electric field intensity is increased in the short distance region between the depletion limits, and is broken down by the application of the low bias voltage thereto.
JP8000180A 1980-06-13 1980-06-13 Semiconductor photoreceiving element Pending JPS575376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8000180A JPS575376A (en) 1980-06-13 1980-06-13 Semiconductor photoreceiving element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8000180A JPS575376A (en) 1980-06-13 1980-06-13 Semiconductor photoreceiving element

Publications (1)

Publication Number Publication Date
JPS575376A true JPS575376A (en) 1982-01-12

Family

ID=13706074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8000180A Pending JPS575376A (en) 1980-06-13 1980-06-13 Semiconductor photoreceiving element

Country Status (1)

Country Link
JP (1) JPS575376A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254674A (en) * 1984-05-31 1985-12-16 Fujitsu Ltd Semiconductor photo receptor
US11084297B2 (en) 2016-07-11 2021-08-10 Seiko Epson Corporation Liquid supply device and liquid ejecting apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254674A (en) * 1984-05-31 1985-12-16 Fujitsu Ltd Semiconductor photo receptor
US11084297B2 (en) 2016-07-11 2021-08-10 Seiko Epson Corporation Liquid supply device and liquid ejecting apparatus

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