JPS5678174A - Variable capacity diode - Google Patents

Variable capacity diode

Info

Publication number
JPS5678174A
JPS5678174A JP15708080A JP15708080A JPS5678174A JP S5678174 A JPS5678174 A JP S5678174A JP 15708080 A JP15708080 A JP 15708080A JP 15708080 A JP15708080 A JP 15708080A JP S5678174 A JPS5678174 A JP S5678174A
Authority
JP
Japan
Prior art keywords
region
junction
capacity
jpn2
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15708080A
Other languages
Japanese (ja)
Other versions
JPS5735592B2 (en
Inventor
Katsuhiko Ito
Takashi Tsuchimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15708080A priority Critical patent/JPS5678174A/en
Publication of JPS5678174A publication Critical patent/JPS5678174A/en
Publication of JPS5735592B2 publication Critical patent/JPS5735592B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To plan for improving a sensitivity of capacity to voltage by a method wherein the same conductive type region having an inpurity concentration higher than an N type region is added to a P-N junction region and the P-N junction is brought close to the surface. CONSTITUTION:An N<+> region 6 formed by injecting ions is added to the variable capacity diode comprising an N type semiconductor substrate 1, N<1> layer 2, N-region 3, P<+>-region 4 and oxidized film 5. For his reason, the P-N junction JPN2 is located at a position near the surface as compared with that of the P-N junction JPN1 in case where the region 6 is not added. Furthermore, the impurity concentration sloping near the P-N junction JPN2 becomes radical depending on the region 6 formed by the ion injection of the impurity. Whereby an elongation of the depletion layer from the P-N junction JPN2 varies radically corresponding to the voltage variation. That is, the index of the capacity variation increases and the sensitivity of the capacity to the voltage is improved.
JP15708080A 1980-11-10 1980-11-10 Variable capacity diode Granted JPS5678174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15708080A JPS5678174A (en) 1980-11-10 1980-11-10 Variable capacity diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15708080A JPS5678174A (en) 1980-11-10 1980-11-10 Variable capacity diode

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP47093600A Division JPS4951879A (en) 1972-09-20 1972-09-20

Publications (2)

Publication Number Publication Date
JPS5678174A true JPS5678174A (en) 1981-06-26
JPS5735592B2 JPS5735592B2 (en) 1982-07-29

Family

ID=15641803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15708080A Granted JPS5678174A (en) 1980-11-10 1980-11-10 Variable capacity diode

Country Status (1)

Country Link
JP (1) JPS5678174A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868134A (en) * 1987-08-31 1989-09-19 Toko, Inc. Method of making a variable-capacitance diode device
US5017950A (en) * 1989-01-19 1991-05-21 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range
US5024955A (en) * 1989-01-19 1991-06-18 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range
US7321158B2 (en) 2003-12-15 2008-01-22 Matsushita Electric Industrial Co., Ltd. Method of manufacturing variable capacitance diode and variable capacitance diode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868134A (en) * 1987-08-31 1989-09-19 Toko, Inc. Method of making a variable-capacitance diode device
US5017950A (en) * 1989-01-19 1991-05-21 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range
US5024955A (en) * 1989-01-19 1991-06-18 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range
US7321158B2 (en) 2003-12-15 2008-01-22 Matsushita Electric Industrial Co., Ltd. Method of manufacturing variable capacitance diode and variable capacitance diode

Also Published As

Publication number Publication date
JPS5735592B2 (en) 1982-07-29

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