JPS56122166A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56122166A
JPS56122166A JP2510180A JP2510180A JPS56122166A JP S56122166 A JPS56122166 A JP S56122166A JP 2510180 A JP2510180 A JP 2510180A JP 2510180 A JP2510180 A JP 2510180A JP S56122166 A JPS56122166 A JP S56122166A
Authority
JP
Japan
Prior art keywords
gate
circuit impedance
withstand amount
finger voltage
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2510180A
Other languages
Japanese (ja)
Other versions
JPH0119273B2 (en
Inventor
Yoichi Araki
Toshio Ogawa
Kazuyuki Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2510180A priority Critical patent/JPS56122166A/en
Publication of JPS56122166A publication Critical patent/JPS56122166A/en
Publication of JPH0119273B2 publication Critical patent/JPH0119273B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To decrease a finger voltage of a semiconductor device by forming a circuit impedance at a regenerating gate and other gate of a semiconductor controlled rectifier, thereby controlling a current and thus increasing the di/dt withstand amount. CONSTITUTION:A thyristor 21 is formed of a main thyristor 22 and an auxiliary unit 23 formed of PNPN junction, and a regenerative gate G2 is so formed on the N type emitter layer of the auxiliary unit 23 as to surround a cathode K. A gate G0 is formed through a di/dt withstand amount remedy circuit impedance r1 on a P type base layer 24, a gate G1 is formed through a finger voltage remedy circuit impedance r2 at a position confronted to the gate G0, and the current of the gate G0 is branched. Thus, the di/dt withstand amount is increased, a breakdown can be prevented and simultaneously the finger voltage is decreased, and when a plurality of gates are connected in parallel, they can be simultaneously turned ON.
JP2510180A 1980-02-29 1980-02-29 Semiconductor device Granted JPS56122166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2510180A JPS56122166A (en) 1980-02-29 1980-02-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2510180A JPS56122166A (en) 1980-02-29 1980-02-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56122166A true JPS56122166A (en) 1981-09-25
JPH0119273B2 JPH0119273B2 (en) 1989-04-11

Family

ID=12156526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2510180A Granted JPS56122166A (en) 1980-02-29 1980-02-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56122166A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4563698A (en) * 1982-08-12 1986-01-07 International Rectifier Corporation SCR Having multiple gates and phosphorus gettering exteriorly of a ring gate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS473536U (en) * 1971-01-29 1972-09-05
JPS5022399A (en) * 1973-06-29 1975-03-10
JPS5138986A (en) * 1974-09-30 1976-03-31 Tokyo Shibaura Electric Co HANDOTAISEIGYOSEIRYUSOCHI
JPS555270A (en) * 1978-11-08 1980-01-16 Ogura Chuck Kk Small-size cutter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS473536U (en) * 1971-01-29 1972-09-05
JPS5022399A (en) * 1973-06-29 1975-03-10
JPS5138986A (en) * 1974-09-30 1976-03-31 Tokyo Shibaura Electric Co HANDOTAISEIGYOSEIRYUSOCHI
JPS555270A (en) * 1978-11-08 1980-01-16 Ogura Chuck Kk Small-size cutter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4563698A (en) * 1982-08-12 1986-01-07 International Rectifier Corporation SCR Having multiple gates and phosphorus gettering exteriorly of a ring gate

Also Published As

Publication number Publication date
JPH0119273B2 (en) 1989-04-11

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