JPS6482586A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS6482586A
JPS6482586A JP23885387A JP23885387A JPS6482586A JP S6482586 A JPS6482586 A JP S6482586A JP 23885387 A JP23885387 A JP 23885387A JP 23885387 A JP23885387 A JP 23885387A JP S6482586 A JPS6482586 A JP S6482586A
Authority
JP
Japan
Prior art keywords
bright line
injected
injection layer
carrier injection
forbidden bandwidth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23885387A
Other languages
Japanese (ja)
Inventor
Hideto Furuyama
Atsushi Kurobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP23885387A priority Critical patent/JPS6482586A/en
Publication of JPS6482586A publication Critical patent/JPS6482586A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To reduced absorption loss for laser oscillation wavelength, and obtain a single vertical mode semiconductor laser wherein threshold current is small, oscillation efficiency is high, and temperature stability is excellent, by setting the forbidden bandwidth of an active layer turning to a host crystal wider than the bright line energy of bright line source impurity, and arranging closely a carrier injection layer whose forbidden bandwidth is narrower than the bright line energy. CONSTITUTION:An active layer 4 is added with bright line source impurity with atomic radiation, and the forbidden bandwidth is set wider than the bright line energy of the bright line source impurity. Between two clad layers 2 and 5, a carrier injection layer 3 is arranged, whose forbidden bandwidth is narrower than the bright line energy of the bright line source impurity. In this constitution, when carrier is injected from the outside, positive hole is injected from the P-type InP 5 side into an active layer 4 to fill the acceptor level Ea, and electron is injected from the N-type InP 2 side into the carrier injection layer 3. Electron injected into the carrier injection layer 3 recombines with hole of Ea and vanishes to radiate a light corresponding to the bright line of Er<3+>.
JP23885387A 1987-09-25 1987-09-25 Semiconductor laser Pending JPS6482586A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23885387A JPS6482586A (en) 1987-09-25 1987-09-25 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23885387A JPS6482586A (en) 1987-09-25 1987-09-25 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6482586A true JPS6482586A (en) 1989-03-28

Family

ID=17036235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23885387A Pending JPS6482586A (en) 1987-09-25 1987-09-25 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6482586A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03227092A (en) * 1990-01-31 1991-10-08 Nec Corp Semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03227092A (en) * 1990-01-31 1991-10-08 Nec Corp Semiconductor laser

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