JPS6425593A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS6425593A
JPS6425593A JP18256787A JP18256787A JPS6425593A JP S6425593 A JPS6425593 A JP S6425593A JP 18256787 A JP18256787 A JP 18256787A JP 18256787 A JP18256787 A JP 18256787A JP S6425593 A JPS6425593 A JP S6425593A
Authority
JP
Japan
Prior art keywords
layer
thick
recessed groove
type
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18256787A
Other languages
Japanese (ja)
Other versions
JPH0716080B2 (en
Inventor
Masaya Mannou
Mototsugu Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP18256787A priority Critical patent/JPH0716080B2/en
Publication of JPS6425593A publication Critical patent/JPS6425593A/en
Publication of JPH0716080B2 publication Critical patent/JPH0716080B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To easily obtain a single-mode AlGaInP system semiconductor laser by forming closely to a clad layer an AlxGa1-xAs layer whose bandgap is larger and whose refractive index is smaller than an activated layer. CONSTITUTION:A recessed groove 2 is formed by the normal photolithography and chemical etching processes. The recessed groove is 1mum deep and 5mum wide. An n-type Al0.75Ga0.25As layer 3 is grown on an n-type GaAs substrate 1 by the MOVPE method to obtain a flat surface even on the recessed groove. The surface is 1.3mum thick on the recessed groove 3. Then an n-type (Al0.4 Ga0.6)0.5In0.5P-clad layer 4 being 0.1mum thick, a non-doped Ga0.5In0.5P layer 5 being 0.1mum thick, a P-type (Al0.4Ga0.6)0.5In0.5P-clad layer 6 being 0.8mum thick, and an n-type GaAs capped layer 7 being 1.5mum thick are grown sequentially. Then a current constriction is made after forming a Zn diffusion layer, and electrodes 8 and 9 for both n-side and p-side are formed. The Al0.75Ga0.25As layer does not absorb light, because it has a bandgap larger than that of the Ga0.5In0.5P layer and a small refractive index, whereby it serves as a layer in which to enclose light.
JP18256787A 1987-07-22 1987-07-22 Semiconductor laser Expired - Lifetime JPH0716080B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18256787A JPH0716080B2 (en) 1987-07-22 1987-07-22 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18256787A JPH0716080B2 (en) 1987-07-22 1987-07-22 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS6425593A true JPS6425593A (en) 1989-01-27
JPH0716080B2 JPH0716080B2 (en) 1995-02-22

Family

ID=16120534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18256787A Expired - Lifetime JPH0716080B2 (en) 1987-07-22 1987-07-22 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPH0716080B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6068898A (en) * 1996-11-13 2000-05-30 Hitoshi Omoto Sheet films, packaging materials, and packaging using the same having pressure control valve

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6068898A (en) * 1996-11-13 2000-05-30 Hitoshi Omoto Sheet films, packaging materials, and packaging using the same having pressure control valve

Also Published As

Publication number Publication date
JPH0716080B2 (en) 1995-02-22

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