JPS6425593A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS6425593A JPS6425593A JP18256787A JP18256787A JPS6425593A JP S6425593 A JPS6425593 A JP S6425593A JP 18256787 A JP18256787 A JP 18256787A JP 18256787 A JP18256787 A JP 18256787A JP S6425593 A JPS6425593 A JP S6425593A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thick
- recessed groove
- type
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To easily obtain a single-mode AlGaInP system semiconductor laser by forming closely to a clad layer an AlxGa1-xAs layer whose bandgap is larger and whose refractive index is smaller than an activated layer. CONSTITUTION:A recessed groove 2 is formed by the normal photolithography and chemical etching processes. The recessed groove is 1mum deep and 5mum wide. An n-type Al0.75Ga0.25As layer 3 is grown on an n-type GaAs substrate 1 by the MOVPE method to obtain a flat surface even on the recessed groove. The surface is 1.3mum thick on the recessed groove 3. Then an n-type (Al0.4 Ga0.6)0.5In0.5P-clad layer 4 being 0.1mum thick, a non-doped Ga0.5In0.5P layer 5 being 0.1mum thick, a P-type (Al0.4Ga0.6)0.5In0.5P-clad layer 6 being 0.8mum thick, and an n-type GaAs capped layer 7 being 1.5mum thick are grown sequentially. Then a current constriction is made after forming a Zn diffusion layer, and electrodes 8 and 9 for both n-side and p-side are formed. The Al0.75Ga0.25As layer does not absorb light, because it has a bandgap larger than that of the Ga0.5In0.5P layer and a small refractive index, whereby it serves as a layer in which to enclose light.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18256787A JPH0716080B2 (en) | 1987-07-22 | 1987-07-22 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18256787A JPH0716080B2 (en) | 1987-07-22 | 1987-07-22 | Semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6425593A true JPS6425593A (en) | 1989-01-27 |
JPH0716080B2 JPH0716080B2 (en) | 1995-02-22 |
Family
ID=16120534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18256787A Expired - Lifetime JPH0716080B2 (en) | 1987-07-22 | 1987-07-22 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0716080B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6068898A (en) * | 1996-11-13 | 2000-05-30 | Hitoshi Omoto | Sheet films, packaging materials, and packaging using the same having pressure control valve |
-
1987
- 1987-07-22 JP JP18256787A patent/JPH0716080B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6068898A (en) * | 1996-11-13 | 2000-05-30 | Hitoshi Omoto | Sheet films, packaging materials, and packaging using the same having pressure control valve |
Also Published As
Publication number | Publication date |
---|---|
JPH0716080B2 (en) | 1995-02-22 |
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