JPS57152179A - Manufacture of semiconductor laser device - Google Patents

Manufacture of semiconductor laser device

Info

Publication number
JPS57152179A
JPS57152179A JP3756781A JP3756781A JPS57152179A JP S57152179 A JPS57152179 A JP S57152179A JP 3756781 A JP3756781 A JP 3756781A JP 3756781 A JP3756781 A JP 3756781A JP S57152179 A JPS57152179 A JP S57152179A
Authority
JP
Japan
Prior art keywords
layer
substrate
laser device
semiconductor laser
type inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3756781A
Other languages
Japanese (ja)
Other versions
JPS6364915B2 (en
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3756781A priority Critical patent/JPS57152179A/en
Publication of JPS57152179A publication Critical patent/JPS57152179A/en
Publication of JPS6364915B2 publication Critical patent/JPS6364915B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a high productivity semiconductor laser device by a method wherein a current narrowing semiconductor layer is grown on a substrate and this substrate is used as the semiconductor substrate whereon a light guiding layer, active layer, and clad layer are grown after the semiconductor substrate is provided with a stripe shaped groove. CONSTITUTION:This relates to the manufacture of a Plano-Convex Waveguide (PCW) type semiconductor laser device. First, the surface of an N type InP substrate 8 is covered with a 5mum wide SiO2 film 16 which then serves as an etching mask for the building of a 1mum tall meas. After the removal of the film 16, a P type InP layer 9 is grown on the both sides of the mesa by the liquid epitaxial growth method. Then an N type InP layer 10 is formed by the same method. Next, a stripe shaped groove 2mum wide and 0.2mum deep in formed by chemical etching. Lastly, an InGaAsP light guiding layer 11, InGaAsP active layer 12, and P type InP clad layer 13 are successively formed. Provision of electrodes 14 and 15 completes a PCW type semiconductor laser device.
JP3756781A 1981-03-16 1981-03-16 Manufacture of semiconductor laser device Granted JPS57152179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3756781A JPS57152179A (en) 1981-03-16 1981-03-16 Manufacture of semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3756781A JPS57152179A (en) 1981-03-16 1981-03-16 Manufacture of semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS57152179A true JPS57152179A (en) 1982-09-20
JPS6364915B2 JPS6364915B2 (en) 1988-12-14

Family

ID=12501098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3756781A Granted JPS57152179A (en) 1981-03-16 1981-03-16 Manufacture of semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS57152179A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0238707A (en) * 1988-07-28 1990-02-08 Sugiura Seisakusho:Kk Stud bolt

Also Published As

Publication number Publication date
JPS6364915B2 (en) 1988-12-14

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