JPS56146288A - Manufacture of semiconductor light emitting device - Google Patents

Manufacture of semiconductor light emitting device

Info

Publication number
JPS56146288A
JPS56146288A JP4866580A JP4866580A JPS56146288A JP S56146288 A JPS56146288 A JP S56146288A JP 4866580 A JP4866580 A JP 4866580A JP 4866580 A JP4866580 A JP 4866580A JP S56146288 A JPS56146288 A JP S56146288A
Authority
JP
Japan
Prior art keywords
epitaxial growth
layer
type inp
light emitting
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4866580A
Other languages
Japanese (ja)
Other versions
JPH0156522B2 (en
Inventor
Ikuo Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4866580A priority Critical patent/JPS56146288A/en
Priority to US06/252,773 priority patent/US4425650A/en
Priority to DE8181102910T priority patent/DE3165007D1/en
Priority to EP81102910A priority patent/EP0038085B1/en
Publication of JPS56146288A publication Critical patent/JPS56146288A/en
Publication of JPH0156522B2 publication Critical patent/JPH0156522B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Abstract

PURPOSE:To improve the yield rate of manufacture for the subject light emitting device by a method wherein a narrow-stripe of mesa structure is formed after performing the process of the first epitaxial growth including an active layer, a mesa stripe is removed after performing the process of the second epitaxial growth and then the process of the third epitaxial growth is performed. CONSTITUTION:The narrow-stripe of mesa structure is formed after performing the process of the first epitaxial growth including the active layer 13, a mesa stripe is removed after performing the process of the second epitaxial growth and then the process of the third epitaxial growth is performed. For example, on an N type InP substrate 11 having the main surface orientation of (001) and the cleavage plane orientation of (100), an N type InP buffer layer 12, including the active layer 13, is formed. Then, a P type InP current blocking layer 16, an N type InP current confining layer 17, a P type InP clad layer 14 and a P type InGaAsP cap layer are formed. Through these procedures, the yield rate of the semiconductor light emitting device can be improved.
JP4866580A 1980-04-15 1980-04-15 Manufacture of semiconductor light emitting device Granted JPS56146288A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP4866580A JPS56146288A (en) 1980-04-15 1980-04-15 Manufacture of semiconductor light emitting device
US06/252,773 US4425650A (en) 1980-04-15 1981-04-10 Buried heterostructure laser diode
DE8181102910T DE3165007D1 (en) 1980-04-15 1981-04-15 Buried heterostructure laser diode and method for making the same
EP81102910A EP0038085B1 (en) 1980-04-15 1981-04-15 Buried heterostructure laser diode and method for making the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4866580A JPS56146288A (en) 1980-04-15 1980-04-15 Manufacture of semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPS56146288A true JPS56146288A (en) 1981-11-13
JPH0156522B2 JPH0156522B2 (en) 1989-11-30

Family

ID=12809620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4866580A Granted JPS56146288A (en) 1980-04-15 1980-04-15 Manufacture of semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS56146288A (en)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KEROX DISCLOSURE JOURNAL=1979 *

Also Published As

Publication number Publication date
JPH0156522B2 (en) 1989-11-30

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