JPS57199284A - Manufacture of (alga)as hetero embedded semiconductor laser - Google Patents

Manufacture of (alga)as hetero embedded semiconductor laser

Info

Publication number
JPS57199284A
JPS57199284A JP8387781A JP8387781A JPS57199284A JP S57199284 A JPS57199284 A JP S57199284A JP 8387781 A JP8387781 A JP 8387781A JP 8387781 A JP8387781 A JP 8387781A JP S57199284 A JPS57199284 A JP S57199284A
Authority
JP
Japan
Prior art keywords
layer
growing
type
crystal
carrier enclosing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8387781A
Other languages
Japanese (ja)
Inventor
Haruki Kurihara
Seiji Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8387781A priority Critical patent/JPS57199284A/en
Publication of JPS57199284A publication Critical patent/JPS57199284A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent the crystal defect from happening at the mesa by a method wherein, in the embedding process, the protected part of the carrier enclosing layer is removed by etching process making use of the solution for growing and then the embedded layer is crystal grown. CONSTITUTION:The n type Al0.35Ga0.65As carrier enclosing layer 12, undope Al0.05Ga0.95As active layer 13, p type Al0.35Ga0.65As carrier enclosing layer 14, p type GaAs ohmic layer 15 and undope Al0.6Ga0.4As liquidus crystal growing mask layer 16 are successively grown on the one surface of n type GaAs substrate 11. Next, in the etching process, the specified part is etched, eliminating a part of the crytal growing layer and the substrate 11 to form the mesa type crystal growing region 17 making the carrier enclosing layers 12, 14 project from the side to the GaAs. Then, in the embedding process, the embedded layer is crystal grown after said projection is removed by the etching process making use of th solutionfor for growing.
JP8387781A 1981-06-02 1981-06-02 Manufacture of (alga)as hetero embedded semiconductor laser Pending JPS57199284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8387781A JPS57199284A (en) 1981-06-02 1981-06-02 Manufacture of (alga)as hetero embedded semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8387781A JPS57199284A (en) 1981-06-02 1981-06-02 Manufacture of (alga)as hetero embedded semiconductor laser

Publications (1)

Publication Number Publication Date
JPS57199284A true JPS57199284A (en) 1982-12-07

Family

ID=13814882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8387781A Pending JPS57199284A (en) 1981-06-02 1981-06-02 Manufacture of (alga)as hetero embedded semiconductor laser

Country Status (1)

Country Link
JP (1) JPS57199284A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61202488A (en) * 1985-03-06 1986-09-08 Fujitsu Ltd Manufacture of buried semiconductor laser
JPH0852963A (en) * 1995-07-17 1996-02-27 Ricoh Co Ltd Data memory card

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61202488A (en) * 1985-03-06 1986-09-08 Fujitsu Ltd Manufacture of buried semiconductor laser
JPH0852963A (en) * 1995-07-17 1996-02-27 Ricoh Co Ltd Data memory card

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