JPS6439789A - Manufacture of resonator for semiconductor laser - Google Patents

Manufacture of resonator for semiconductor laser

Info

Publication number
JPS6439789A
JPS6439789A JP19538087A JP19538087A JPS6439789A JP S6439789 A JPS6439789 A JP S6439789A JP 19538087 A JP19538087 A JP 19538087A JP 19538087 A JP19538087 A JP 19538087A JP S6439789 A JPS6439789 A JP S6439789A
Authority
JP
Japan
Prior art keywords
active layer
etched
held
high vacuum
mirrors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19538087A
Other languages
Japanese (ja)
Other versions
JP2740170B2 (en
Inventor
Mamoru Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62195380A priority Critical patent/JP2740170B2/en
Publication of JPS6439789A publication Critical patent/JPS6439789A/en
Application granted granted Critical
Publication of JP2740170B2 publication Critical patent/JP2740170B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To cleanly hold the end surfaces of etched mirrors and to prevent a crystal defect from propagating by a method wherein, after a semiconductor laser crystal comprising an active layer is etched in a high vacuum to form the etched mirrors, a compound semiconductor crystal having a forbidden band width larger than that of the above active layer is epitaxially grown thereon while the high vacuum is held. CONSTITUTION:Resists 106 are provided on a laser crystal consisting of a multilayer AlGaAs layer laminated on an N-type GaAs substrate 101. Then, etched mirrors 109 are formed by an RIBE using the resists 106 as etching masks. The resist masks are removed by an RIBE using oxygen while a high vacuum is successively held. Moreover, oxygen and chlorine, which are adsorbed on the etching surface, are removed with a hydrogen radical excited by an ECR at 50 W. Moreover, compound semiconductor layers, such as undoped Al0.5Ga0.5As window layers 108, having a forbidden band width larger than that of an active layer 103 and having a resistance higher than that of the active layer 103 are epitaxially grown on the end surfaces of the etched mirrors by a molecular beam epitaxial method while the vacuum is held.
JP62195380A 1987-08-06 1987-08-06 Semiconductor laser resonator manufacturing method Expired - Lifetime JP2740170B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62195380A JP2740170B2 (en) 1987-08-06 1987-08-06 Semiconductor laser resonator manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62195380A JP2740170B2 (en) 1987-08-06 1987-08-06 Semiconductor laser resonator manufacturing method

Publications (2)

Publication Number Publication Date
JPS6439789A true JPS6439789A (en) 1989-02-10
JP2740170B2 JP2740170B2 (en) 1998-04-15

Family

ID=16340203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62195380A Expired - Lifetime JP2740170B2 (en) 1987-08-06 1987-08-06 Semiconductor laser resonator manufacturing method

Country Status (1)

Country Link
JP (1) JP2740170B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0469900A2 (en) * 1990-08-01 1992-02-05 Sharp Kabushiki Kaisha A method for the production of a semiconductor laser device
EP0684671A1 (en) * 1994-05-04 1995-11-29 Alcatel N.V. Method for the preparation and passivation of the end mirrors of a high emissive power semiconductor laser and related laser device
JPH09186396A (en) * 1996-01-05 1997-07-15 Nec Corp Fabrication of semiconductor laser element
JP2019515490A (en) * 2016-04-20 2019-06-06 トルンプフ フォトニクス インコーポレイテッドＴｒｕｍｐｆ Ｐｈｏｔｏｎｉｃｓ Ｉｎｃ． Laser facet passivation and system for performing such passivation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61267388A (en) * 1985-05-21 1986-11-26 Nec Corp Manufacture of semiconductor laser resonator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61267388A (en) * 1985-05-21 1986-11-26 Nec Corp Manufacture of semiconductor laser resonator

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0469900A2 (en) * 1990-08-01 1992-02-05 Sharp Kabushiki Kaisha A method for the production of a semiconductor laser device
EP0684671A1 (en) * 1994-05-04 1995-11-29 Alcatel N.V. Method for the preparation and passivation of the end mirrors of a high emissive power semiconductor laser and related laser device
JPH09186396A (en) * 1996-01-05 1997-07-15 Nec Corp Fabrication of semiconductor laser element
JP2019515490A (en) * 2016-04-20 2019-06-06 トルンプフ フォトニクス インコーポレイテッドＴｒｕｍｐｆ Ｐｈｏｔｏｎｉｃｓ Ｉｎｃ． Laser facet passivation and system for performing such passivation

Also Published As

Publication number Publication date
JP2740170B2 (en) 1998-04-15

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