JPS6477177A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6477177A JPS6477177A JP23378587A JP23378587A JPS6477177A JP S6477177 A JPS6477177 A JP S6477177A JP 23378587 A JP23378587 A JP 23378587A JP 23378587 A JP23378587 A JP 23378587A JP S6477177 A JPS6477177 A JP S6477177A
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- layer
- inas
- semiconductor layer
- mbe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To allow a first semiconductor layer to be exposed without damage by a method wherein a second semiconductor layer constituting a contact layer is exposed to an etchant not affecting the first semiconductor layer to be a channel layer. CONSTITUTION:An N-GaAs layer 32 is formed by an epitaxial growth technique, such as MBE or OMVPE, on a GaAs substrate 30. Next, InAs atom layers 3 and GaAs atom layers 1 are formed by MBE on the N-GaAs layer 32, one upon the other, into an InAs-GaAs superlattice laminate 34. After this, a resist pattern 36 is formed, which is provided with an opening 36A at a location for a recess. A process follow wherein the resist pattern 36 serves as a mask in wet etching using hydrochloric acid. GaAs is not affected by hydrochloric acid but InAs is. As the result, the InAs-GaAs superlattice laminate 34 not protected by the resist 36 is etched away, without any noticeable damage left in the surface of the N-GaAs layer 32.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23378587A JPS6477177A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23378587A JPS6477177A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6477177A true JPS6477177A (en) | 1989-03-23 |
Family
ID=16960531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23378587A Pending JPS6477177A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6477177A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0218965A (en) * | 1988-07-07 | 1990-01-23 | Fujitsu Ltd | Ohmic contact structure |
-
1987
- 1987-09-18 JP JP23378587A patent/JPS6477177A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0218965A (en) * | 1988-07-07 | 1990-01-23 | Fujitsu Ltd | Ohmic contact structure |
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