JPS6430287A - Semiconductor laser device and manufacture thereof - Google Patents

Semiconductor laser device and manufacture thereof

Info

Publication number
JPS6430287A
JPS6430287A JP18712087A JP18712087A JPS6430287A JP S6430287 A JPS6430287 A JP S6430287A JP 18712087 A JP18712087 A JP 18712087A JP 18712087 A JP18712087 A JP 18712087A JP S6430287 A JPS6430287 A JP S6430287A
Authority
JP
Japan
Prior art keywords
protruding part
layers
stripe
substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18712087A
Other languages
Japanese (ja)
Other versions
JPH084180B2 (en
Inventor
Akio Yoshikawa
Takashi Sugino
Masanori Hirose
Atsuya Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP18712087A priority Critical patent/JPH084180B2/en
Publication of JPS6430287A publication Critical patent/JPS6430287A/en
Publication of JPH084180B2 publication Critical patent/JPH084180B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To facilitate manufacture of an inner stripe type laser by one crystal growth process by a method wherein, on a one conductivity type (100) substrate which has a stripe-shape protruding part along the <011> direction, multilayered thin films including a double-hetero-structure containing an active layer which is flat on the upper part of the protruding part are formed and current blocking layers are formed over the whole surface except on a part of the upper part of the protruding part. CONSTITUTION:A stripe-shape protruding part 2 is formed on a one conductivity type (100) substrate along the <011> direction. After the surface is cleaned, crystal growth is carried out on the substrate 1 with the protruding part 2. P-type GaAs buffer layers 3 and further p-type AlGaAs cladding layers 4 are successively formed by an organic metal vapor phase epitaxial growth method. At that time, faces (111) B which make angles about 54 deg. with the face (100) are made to grow on the ridge of the protruding part 2 as sidewalls to form a region with a triangular cross section. In the middle of the process of burying the triangular region with the growth of the layers on the flat parts on both the sides of the ridge, current blocking layers 5 are made to grow.
JP18712087A 1987-07-27 1987-07-27 Semiconductor laser device and method of manufacturing the same Expired - Lifetime JPH084180B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18712087A JPH084180B2 (en) 1987-07-27 1987-07-27 Semiconductor laser device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18712087A JPH084180B2 (en) 1987-07-27 1987-07-27 Semiconductor laser device and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPS6430287A true JPS6430287A (en) 1989-02-01
JPH084180B2 JPH084180B2 (en) 1996-01-17

Family

ID=16200460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18712087A Expired - Lifetime JPH084180B2 (en) 1987-07-27 1987-07-27 Semiconductor laser device and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JPH084180B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0454476A2 (en) 1990-04-26 1991-10-30 Fujitsu Limited Semiconductor laser having double heterostructure and method of producing the same
EP0493125A2 (en) * 1990-12-27 1992-07-01 Furukawa Electric Co., Ltd. Semiconductor laser device
US5202285A (en) * 1990-04-26 1993-04-13 Fujitsu Limited Semiconductor laser having double heterostructure and method of producing same
US5255281A (en) * 1990-04-26 1993-10-19 Fujitsu Limited Semiconductor laser having double heterostructure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0454476A2 (en) 1990-04-26 1991-10-30 Fujitsu Limited Semiconductor laser having double heterostructure and method of producing the same
US5202285A (en) * 1990-04-26 1993-04-13 Fujitsu Limited Semiconductor laser having double heterostructure and method of producing same
US5255281A (en) * 1990-04-26 1993-10-19 Fujitsu Limited Semiconductor laser having double heterostructure
EP0493125A2 (en) * 1990-12-27 1992-07-01 Furukawa Electric Co., Ltd. Semiconductor laser device

Also Published As

Publication number Publication date
JPH084180B2 (en) 1996-01-17

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