JPS6430287A - Semiconductor laser device and manufacture thereof - Google Patents
Semiconductor laser device and manufacture thereofInfo
- Publication number
- JPS6430287A JPS6430287A JP18712087A JP18712087A JPS6430287A JP S6430287 A JPS6430287 A JP S6430287A JP 18712087 A JP18712087 A JP 18712087A JP 18712087 A JP18712087 A JP 18712087A JP S6430287 A JPS6430287 A JP S6430287A
- Authority
- JP
- Japan
- Prior art keywords
- protruding part
- layers
- stripe
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To facilitate manufacture of an inner stripe type laser by one crystal growth process by a method wherein, on a one conductivity type (100) substrate which has a stripe-shape protruding part along the <011> direction, multilayered thin films including a double-hetero-structure containing an active layer which is flat on the upper part of the protruding part are formed and current blocking layers are formed over the whole surface except on a part of the upper part of the protruding part. CONSTITUTION:A stripe-shape protruding part 2 is formed on a one conductivity type (100) substrate along the <011> direction. After the surface is cleaned, crystal growth is carried out on the substrate 1 with the protruding part 2. P-type GaAs buffer layers 3 and further p-type AlGaAs cladding layers 4 are successively formed by an organic metal vapor phase epitaxial growth method. At that time, faces (111) B which make angles about 54 deg. with the face (100) are made to grow on the ridge of the protruding part 2 as sidewalls to form a region with a triangular cross section. In the middle of the process of burying the triangular region with the growth of the layers on the flat parts on both the sides of the ridge, current blocking layers 5 are made to grow.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18712087A JPH084180B2 (en) | 1987-07-27 | 1987-07-27 | Semiconductor laser device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18712087A JPH084180B2 (en) | 1987-07-27 | 1987-07-27 | Semiconductor laser device and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6430287A true JPS6430287A (en) | 1989-02-01 |
JPH084180B2 JPH084180B2 (en) | 1996-01-17 |
Family
ID=16200460
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18712087A Expired - Lifetime JPH084180B2 (en) | 1987-07-27 | 1987-07-27 | Semiconductor laser device and method of manufacturing the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH084180B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0454476A2 (en) | 1990-04-26 | 1991-10-30 | Fujitsu Limited | Semiconductor laser having double heterostructure and method of producing the same |
EP0493125A2 (en) * | 1990-12-27 | 1992-07-01 | Furukawa Electric Co., Ltd. | Semiconductor laser device |
US5202285A (en) * | 1990-04-26 | 1993-04-13 | Fujitsu Limited | Semiconductor laser having double heterostructure and method of producing same |
US5255281A (en) * | 1990-04-26 | 1993-10-19 | Fujitsu Limited | Semiconductor laser having double heterostructure |
-
1987
- 1987-07-27 JP JP18712087A patent/JPH084180B2/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0454476A2 (en) | 1990-04-26 | 1991-10-30 | Fujitsu Limited | Semiconductor laser having double heterostructure and method of producing the same |
US5202285A (en) * | 1990-04-26 | 1993-04-13 | Fujitsu Limited | Semiconductor laser having double heterostructure and method of producing same |
US5255281A (en) * | 1990-04-26 | 1993-10-19 | Fujitsu Limited | Semiconductor laser having double heterostructure |
EP0493125A2 (en) * | 1990-12-27 | 1992-07-01 | Furukawa Electric Co., Ltd. | Semiconductor laser device |
Also Published As
Publication number | Publication date |
---|---|
JPH084180B2 (en) | 1996-01-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080117 Year of fee payment: 12 |