JPS6442888A - Manufacture of semiconductor laser - Google Patents

Abstract

PURPOSE:To facilitate the formation of a semiconductor laser uniform in quality and excellent in reproductivity by a method wherein second conductivity type clad layers are successively and continuously grown on a first conductivity type semiconductivity substrate without being separated on both sides of a mesa stripe, thereafter a first conductivity type current blocking layer is selectively formed on both sides of the mesa stripe as it is buried, and furthermore a second conductivity type layer is formed onto the whole face. CONSTITUTION:A crystal is grown on a substrate previously provided with grooves 22 on it through an organic metallic vapor growth method, where at first the crystal is grown on the upper face of the mesa stripe 21 and the insides of the grooves 22 respectively as it is separated into two parts, so that an InGaAsP active layer 3 can be separated into a light emitting section on the mesa stripe 21 and a current constricting section as another. The crystal begins to grow continuously on the upper face of the mesa stripe 21 and the insides of the grooves 22 as it keeps growing further. Thereafter, an n-type InP block layer 6 is selectively grown, and further a p-type InP clad layer 7 and a p-type InGaAsP cap layer 8 are grown, and thus a dualchannel planar buried hetero-structure can be formed. By these processes, a complicated process such as to remove a part of a selective mask or the like can be dispensed with and a mask alignment can be facilitated.