JPS5791574A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPS5791574A
JPS5791574A JP16756380A JP16756380A JPS5791574A JP S5791574 A JPS5791574 A JP S5791574A JP 16756380 A JP16756380 A JP 16756380A JP 16756380 A JP16756380 A JP 16756380A JP S5791574 A JPS5791574 A JP S5791574A
Authority
JP
Japan
Prior art keywords
layer
inp
emitting diode
light emitting
round
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16756380A
Other languages
Japanese (ja)
Inventor
Mitsunori Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16756380A priority Critical patent/JPS5791574A/en
Publication of JPS5791574A publication Critical patent/JPS5791574A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To improve coupling efficiency with an optical fiber by a method wherein a protrusive or hollow shaped round region is provided at the main surface of a substrate and an reverse conductivity type current blocking layer is provided on the substrate except the round region in a light emitting diode of heterodyne structure. CONSTITUTION:After forming a P-InP layer 22 as a current blocking layer on an N-InP substrate 20, a round hollow 21 is provided at the layer 22 by using photoetching. An N-InP layer 23, active layers 24a, 24b and a P-InP layer 25, and a layer 26 are consecutively formed by liquid growth method. At that time, the active layers are grown by interruption through the round hollow and other regions. Therefore, the active layer 24a at the upper part of the round hollow is completely buried with InP. Most of the carriers are injected in the active layer 24a for recombination. Therefore, a light emitting diode of double heterodyne structure having stepped light intensity distribution can be obtained. In this way, coupling efficiency with an optical fiber can be improved.
JP16756380A 1980-11-28 1980-11-28 Light emitting diode Pending JPS5791574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16756380A JPS5791574A (en) 1980-11-28 1980-11-28 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16756380A JPS5791574A (en) 1980-11-28 1980-11-28 Light emitting diode

Publications (1)

Publication Number Publication Date
JPS5791574A true JPS5791574A (en) 1982-06-07

Family

ID=15852041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16756380A Pending JPS5791574A (en) 1980-11-28 1980-11-28 Light emitting diode

Country Status (1)

Country Link
JP (1) JPS5791574A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121885A (en) * 1982-12-28 1984-07-14 Fujitsu Ltd Semiconductor light emitting element and manufacture thereof
EP0177617A1 (en) * 1984-03-28 1986-04-16 JAPAN represented by PRESIDENT OF TOHOKU UNIVERSITY Junction semiconductor light-emitting element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51142281A (en) * 1975-06-02 1976-12-07 Nippon Telegr & Teleph Corp <Ntt> Method of manufacturing light emitting diode
JPS523392A (en) * 1975-06-23 1977-01-11 Xerox Corp Hetero juntion diode laser and method of producing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51142281A (en) * 1975-06-02 1976-12-07 Nippon Telegr & Teleph Corp <Ntt> Method of manufacturing light emitting diode
JPS523392A (en) * 1975-06-23 1977-01-11 Xerox Corp Hetero juntion diode laser and method of producing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121885A (en) * 1982-12-28 1984-07-14 Fujitsu Ltd Semiconductor light emitting element and manufacture thereof
EP0177617A1 (en) * 1984-03-28 1986-04-16 JAPAN represented by PRESIDENT OF TOHOKU UNIVERSITY Junction semiconductor light-emitting element
US4742378A (en) * 1984-03-28 1988-05-03 Japan Represented By President Of Tohoku University Junction-type semiconductor light emitting device with mesa

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