JPS6482684A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS6482684A
JPS6482684A JP24131787A JP24131787A JPS6482684A JP S6482684 A JPS6482684 A JP S6482684A JP 24131787 A JP24131787 A JP 24131787A JP 24131787 A JP24131787 A JP 24131787A JP S6482684 A JPS6482684 A JP S6482684A
Authority
JP
Japan
Prior art keywords
layer
growth
inp
grown
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24131787A
Other languages
Japanese (ja)
Inventor
Tatsuya Sasaki
Ikuo Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24131787A priority Critical patent/JPS6482684A/en
Publication of JPS6482684A publication Critical patent/JPS6482684A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To reduce a leakage current and to improve characteristics of a semiconductor laser by forming the layer of a buried hetero structure semiconductor laser by organic metal vapor growth. CONSTITUTION:An organic metal vapor growth and an MOVPE growth are conducted, for example, under reduced pressure of 76Torr, and growing temperature is set to approx. 625 deg.C. As a first growth, an InP buffer layer 2, an InGaAsP active layer 3 and an InP clad layer 4 are continuously grown on an InP substrate 1, and a DH structure is formed. After an SiN film is formed by plasma CVD on the surface, an SiN film remains in a stripe state in a direction (110), and with the film as a mask it is selectively etched to the substrate 1 with an etchant to form a vertical mesa on the side face (-100). Then, as a second growth, an InGaAsP turn ON preventive semiconductor layer 11, an InP current blocking layer 13 and an InP current blocking layer 13 are continuously buried and grown. After the SiN film on the mesa is removed, as a third growth an InP clad layer 21 and an InGaAsP cap layer 22 are grown on a whole surface.
JP24131787A 1987-09-25 1987-09-25 Manufacture of semiconductor laser Pending JPS6482684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24131787A JPS6482684A (en) 1987-09-25 1987-09-25 Manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24131787A JPS6482684A (en) 1987-09-25 1987-09-25 Manufacture of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6482684A true JPS6482684A (en) 1989-03-28

Family

ID=17072492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24131787A Pending JPS6482684A (en) 1987-09-25 1987-09-25 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6482684A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6350629B1 (en) 1998-09-02 2002-02-26 Nec Corporation Optical semiconductor device having active layer and carrier recombination layer different from each other
US6944027B2 (en) 2002-04-18 2005-09-13 Canon Kabushiki Kaisha Switching power supply unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6350629B1 (en) 1998-09-02 2002-02-26 Nec Corporation Optical semiconductor device having active layer and carrier recombination layer different from each other
US6944027B2 (en) 2002-04-18 2005-09-13 Canon Kabushiki Kaisha Switching power supply unit

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