JPS57198678A - Optical semiconductor device - Google Patents

Optical semiconductor device

Info

Publication number
JPS57198678A
JPS57198678A JP56082627A JP8262781A JPS57198678A JP S57198678 A JPS57198678 A JP S57198678A JP 56082627 A JP56082627 A JP 56082627A JP 8262781 A JP8262781 A JP 8262781A JP S57198678 A JPS57198678 A JP S57198678A
Authority
JP
Japan
Prior art keywords
layer
type
type inp
stripe
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56082627A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56082627A priority Critical patent/JPS57198678A/en
Publication of JPS57198678A publication Critical patent/JPS57198678A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Abstract

PURPOSE:To deflect a light beam along a stripe, by providing a step at the approximately central part of an active layer constituting the optical semiconductor device, forming a stripe region down to a half the step, and providing a light irradating window, which corresponding to the step, on the surface. CONSTITUTION:On an n type InP substrate 11, an n type InP confining layer 12 and an InGaAs active layer 13 are layered and epitaxially grown. Etching treatment is performed, and the layer 13 is transformed into a thin layer and a thick layer. The step 13a is formed at the point of thickness change. Then, a p type InP confining layer 14 and an n type InGaAsP cap layer 15 are grown on the entire surface including the step so as to obtain the flat surface. Cd, Zn, and the like are diffused from the surface of the layer 15, and a P type stripe region 16, whose lower end reaches a half the depth of the layer 14, is formed in the vicinity of the step. Then a positive electrode 17 is deposited on the layer 15. A light irradiating window 17a corresponding to the step 13a is provided along the region 16. A negative electrode 18 is deposited on the back surface of the substrate 11.
JP56082627A 1981-05-30 1981-05-30 Optical semiconductor device Pending JPS57198678A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56082627A JPS57198678A (en) 1981-05-30 1981-05-30 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56082627A JPS57198678A (en) 1981-05-30 1981-05-30 Optical semiconductor device

Publications (1)

Publication Number Publication Date
JPS57198678A true JPS57198678A (en) 1982-12-06

Family

ID=13779678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56082627A Pending JPS57198678A (en) 1981-05-30 1981-05-30 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JPS57198678A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01165189A (en) * 1987-12-22 1989-06-29 Canon Inc Semiconductor laser
US4892374A (en) * 1988-03-03 1990-01-09 American Telephone And Telegraph Company, At&T Bell Laboratories Article comprising an opto-electronic device and an optical waveguide coupled thereto, and method of making the article
EP1309050A1 (en) * 2001-11-06 2003-05-07 Agilent Technologies, Inc. (a Delaware corporation) Laser device and method therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01165189A (en) * 1987-12-22 1989-06-29 Canon Inc Semiconductor laser
US4892374A (en) * 1988-03-03 1990-01-09 American Telephone And Telegraph Company, At&T Bell Laboratories Article comprising an opto-electronic device and an optical waveguide coupled thereto, and method of making the article
EP1309050A1 (en) * 2001-11-06 2003-05-07 Agilent Technologies, Inc. (a Delaware corporation) Laser device and method therefor

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