JPS57198675A - Optical semiconductor device - Google Patents

Optical semiconductor device

Info

Publication number
JPS57198675A
JPS57198675A JP8262481A JP8262481A JPS57198675A JP S57198675 A JPS57198675 A JP S57198675A JP 8262481 A JP8262481 A JP 8262481A JP 8262481 A JP8262481 A JP 8262481A JP S57198675 A JPS57198675 A JP S57198675A
Authority
JP
Japan
Prior art keywords
layer
region
confining
type inp
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8262481A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8262481A priority Critical patent/JPS57198675A/en
Publication of JPS57198675A publication Critical patent/JPS57198675A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To make the device suitable for optical switches by embedding a layer having the different refractive index in the region which comprises parts of a confining region and an active region at one side of a stripe shaped region and a part of a confining region beneath the active region, and deflecting light to either direction in a junction plane along the stripe shaped region. CONSTITUTION:On an n type InP substrate 11, an n type InP confining layer 12, an InGaAsP active layer 13, and a p type InP confining layer 14 are layered and epitaxially grown. The region, which comprises the outside parts of the layers 14 and 13 from the area which is to become a stripe forming region 17 later and a part of the layer 12, is etched away. A p type refractive index difference forming layer 15 is formed in said region. Then an n type InP cap layer 16 is grown on said layer 15 and the layer 14 continued from the layer 15. The p type stripe region 17, which enters the layer 14 and whose lower side is separated from the layer 15, is formed at the center of the layer 16 by the diffusion of Cd, Zn, and the like. Thereafter a positive electrode 18 is deposited on the entire surface, and a light irradiating window 18a which corresponds to the region 15 is provided at the one side of the region 17. A negative electrode 19 is deposited on the back surface of the substrate 11.
JP8262481A 1981-05-30 1981-05-30 Optical semiconductor device Pending JPS57198675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8262481A JPS57198675A (en) 1981-05-30 1981-05-30 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8262481A JPS57198675A (en) 1981-05-30 1981-05-30 Optical semiconductor device

Publications (1)

Publication Number Publication Date
JPS57198675A true JPS57198675A (en) 1982-12-06

Family

ID=13779599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8262481A Pending JPS57198675A (en) 1981-05-30 1981-05-30 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JPS57198675A (en)

Similar Documents

Publication Publication Date Title
JPS6489491A (en) Surface luminous semiconductor laser
KR850008405A (en) Semiconductor photodetector and its manufacturing method
JPS5710285A (en) Semiconductor laser
JPS57198675A (en) Optical semiconductor device
JPS57198678A (en) Optical semiconductor device
JPS61121373A (en) Surface light-emitting element and manufacture thereof
JPS57198677A (en) Optical semiconductor device
JPS57198676A (en) Optical semiconductor device
JPS57168219A (en) Manufacture of directional coupler type optical modulator
JPS57198679A (en) Optical semiconductor device
JPS56142691A (en) Semiconductor light emitting device
JPS57162483A (en) Semiconductor luminous device
JPS647681A (en) Distributed reflex semiconductor laser
JPS57152180A (en) Manufacture of semiconductor laser device
JPS57207388A (en) Manufacture of semiconductor laser
JP2711055B2 (en) Semiconductor photodetector and method of manufacturing the same
JPS5763882A (en) Manufacture of semiconductor laser
JPS5730381A (en) Schottky type photodetector
JPS57139984A (en) Buried photo emitting and receiving semiconductor integrated device
JPS5748286A (en) Manufacture of buried hetero structured semiconductor laser
JPS57167693A (en) Manufacture of optical semiconductor element
JPS56164590A (en) Semiconductor laser
JPS57198680A (en) Optical semiconductor device
JPS56112786A (en) Manufacture of semiconductor laser
JPS57139982A (en) Semiconductor laser element