JPS5654085A - Semiconductor laser and manufacture thereof - Google Patents

Semiconductor laser and manufacture thereof

Info

Publication number
JPS5654085A
JPS5654085A JP13038179A JP13038179A JPS5654085A JP S5654085 A JPS5654085 A JP S5654085A JP 13038179 A JP13038179 A JP 13038179A JP 13038179 A JP13038179 A JP 13038179A JP S5654085 A JPS5654085 A JP S5654085A
Authority
JP
Japan
Prior art keywords
type
regions
converted
those
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13038179A
Other languages
Japanese (ja)
Inventor
Kenji Ikeda
Toyohiro Takimoto
Hideyo Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13038179A priority Critical patent/JPS5654085A/en
Publication of JPS5654085A publication Critical patent/JPS5654085A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To obtain a laser output having narrowed the radiation angle by a high output by maintaining a good oscillation characteristic by a method wherein a number of active regions are provided and the active regions are respectively brought into contact with each other in order to be phase-locked. CONSTITUTION:Regions 11, 21 converted into P type regions and regions 12, 22 converted into P<+> type regions respectively are formed in an N type GaAlAs crystal layer 1 and an N type GaAs crystal layer 2 and further, a region 31 converted into a P type region and a region 32 converted into a P type region are formed in an N type GaAlAs crystal layer 3, thereby forming a P-N junction of semiconductor crystal layers. Also, the P-N junction is made up by providing an N type GaAlAs crystal layer 5 which respectively have regions 41, 51 converted into those of P type and regions 42, 52 converted into those of P<+> type. The refractive indexes of the crystal layers 1, 3, 5 are made lower than those of the crystal layers 2, 4 and the forbidden band widths thereof are made wider than those of the crystal layers 2, 4 to generate laser lights with a narrow radiation angle in high output, with a good oscillation characteristic being held.
JP13038179A 1979-10-09 1979-10-09 Semiconductor laser and manufacture thereof Pending JPS5654085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13038179A JPS5654085A (en) 1979-10-09 1979-10-09 Semiconductor laser and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13038179A JPS5654085A (en) 1979-10-09 1979-10-09 Semiconductor laser and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5654085A true JPS5654085A (en) 1981-05-13

Family

ID=15032969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13038179A Pending JPS5654085A (en) 1979-10-09 1979-10-09 Semiconductor laser and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5654085A (en)

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