JPS54157093A - Production method of semiconductor laser element - Google Patents
Production method of semiconductor laser elementInfo
- Publication number
- JPS54157093A JPS54157093A JP6591778A JP6591778A JPS54157093A JP S54157093 A JPS54157093 A JP S54157093A JP 6591778 A JP6591778 A JP 6591778A JP 6591778 A JP6591778 A JP 6591778A JP S54157093 A JPS54157093 A JP S54157093A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- groove
- mesa
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To facilitate to divide a semiconductor into pellets by providing a V- shaped groove reaching the substrate and cleaving the semiconductor along this groove when the semiconductor substrate is divided into pellets after alloy semiconductor buffer, active and top layers including Pb are grown on the multiple semioncudtor substrate including Pb.
CONSTITUTION: Pb0.93Sn0.07Te buffer layer 22, Pb0.85Sn0.15Te active layer 23 and Pb0.93Sn0.07Te top layer 24 are laminated on PbTe substrate 21 and are grown epitaxially in liquid phase, and the laser beam emitted by the light emission part of layer 23 is reflected and enclosed by layers 22 and 24 to lower the threshold current density. Next, photo resistor film 26 is applied onto layer 24 to remove region d to be subjected to mesa ethcing, and the surface is etched by hydro-bromic acid with bromine added to form a mesa groove for limiting the light emission part until the mesa groove reaches layer 22. Further, the mesa groove is provided until the mesa groove reaches substrae 21 for the purpose of dividing the substrate into laser element chips, and then, the substrate is divided into chips by applying the force into the groove in the vertical direction.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6591778A JPS54157093A (en) | 1978-05-31 | 1978-05-31 | Production method of semiconductor laser element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6591778A JPS54157093A (en) | 1978-05-31 | 1978-05-31 | Production method of semiconductor laser element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54157093A true JPS54157093A (en) | 1979-12-11 |
Family
ID=13300794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6591778A Pending JPS54157093A (en) | 1978-05-31 | 1978-05-31 | Production method of semiconductor laser element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54157093A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4943971A (en) * | 1989-02-24 | 1990-07-24 | Spectra-Physics, Inc. | Low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays |
| US5119388A (en) * | 1989-02-24 | 1992-06-02 | Laser Photonics, Inc. | Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49106784A (en) * | 1973-02-12 | 1974-10-09 | ||
| JPS52131486A (en) * | 1976-04-28 | 1977-11-04 | Oki Electric Ind Co Ltd | Semicondcutor laser unit |
-
1978
- 1978-05-31 JP JP6591778A patent/JPS54157093A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49106784A (en) * | 1973-02-12 | 1974-10-09 | ||
| JPS52131486A (en) * | 1976-04-28 | 1977-11-04 | Oki Electric Ind Co Ltd | Semicondcutor laser unit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4943971A (en) * | 1989-02-24 | 1990-07-24 | Spectra-Physics, Inc. | Low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays |
| US5119388A (en) * | 1989-02-24 | 1992-06-02 | Laser Photonics, Inc. | Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays |
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