JPS54107286A - Production of semiconductor junction laser element - Google Patents

Production of semiconductor junction laser element

Info

Publication number
JPS54107286A
JPS54107286A JP1425478A JP1425478A JPS54107286A JP S54107286 A JPS54107286 A JP S54107286A JP 1425478 A JP1425478 A JP 1425478A JP 1425478 A JP1425478 A JP 1425478A JP S54107286 A JPS54107286 A JP S54107286A
Authority
JP
Japan
Prior art keywords
laser element
film
semiconductor junction
gaas
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1425478A
Other languages
Japanese (ja)
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1425478A priority Critical patent/JPS54107286A/en
Publication of JPS54107286A publication Critical patent/JPS54107286A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To realize the production method of a semiconductor junction laser element where reliability is high and fundamental-mode oscillation is possible.
CONSTITUTION: Al2O3 film 2 is caused to adhere onto GaAs substrate 1 which was subjected to polishing and mirror finishing, thereby forming a substrate. Next, a part of Al2O3 film 2 is removed to expose the GaAs substrate surface, and n-type GaAlAs layer 4, GaAs active layer 5, p-type GaAlAs layer 6 and p-type GaAs layer 7 are formed on the exposed surface, and last, SiO2 film 9 is utilized to provided electrodes 10 and 11.
COPYRIGHT: (C)1979,JPO&Japio
JP1425478A 1978-02-10 1978-02-10 Production of semiconductor junction laser element Pending JPS54107286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1425478A JPS54107286A (en) 1978-02-10 1978-02-10 Production of semiconductor junction laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1425478A JPS54107286A (en) 1978-02-10 1978-02-10 Production of semiconductor junction laser element

Publications (1)

Publication Number Publication Date
JPS54107286A true JPS54107286A (en) 1979-08-22

Family

ID=11855946

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1425478A Pending JPS54107286A (en) 1978-02-10 1978-02-10 Production of semiconductor junction laser element

Country Status (1)

Country Link
JP (1) JPS54107286A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5648193A (en) * 1979-09-18 1981-05-01 Xerox Corp Light controlled integrated current diode laser
US4622673A (en) * 1984-05-24 1986-11-11 At&T Bell Laboratories Heteroepitaxial ridge overgrown laser
WO1990003055A1 (en) * 1988-09-01 1990-03-22 Seiko Epson Corporation Light emitting device and method of producing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5648193A (en) * 1979-09-18 1981-05-01 Xerox Corp Light controlled integrated current diode laser
US4622673A (en) * 1984-05-24 1986-11-11 At&T Bell Laboratories Heteroepitaxial ridge overgrown laser
WO1990003055A1 (en) * 1988-09-01 1990-03-22 Seiko Epson Corporation Light emitting device and method of producing the same

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