JPS54107286A - Production of semiconductor junction laser element - Google Patents
Production of semiconductor junction laser elementInfo
- Publication number
- JPS54107286A JPS54107286A JP1425478A JP1425478A JPS54107286A JP S54107286 A JPS54107286 A JP S54107286A JP 1425478 A JP1425478 A JP 1425478A JP 1425478 A JP1425478 A JP 1425478A JP S54107286 A JPS54107286 A JP S54107286A
- Authority
- JP
- Japan
- Prior art keywords
- laser element
- film
- semiconductor junction
- gaas
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To realize the production method of a semiconductor junction laser element where reliability is high and fundamental-mode oscillation is possible.
CONSTITUTION: Al2O3 film 2 is caused to adhere onto GaAs substrate 1 which was subjected to polishing and mirror finishing, thereby forming a substrate. Next, a part of Al2O3 film 2 is removed to expose the GaAs substrate surface, and n-type GaAlAs layer 4, GaAs active layer 5, p-type GaAlAs layer 6 and p-type GaAs layer 7 are formed on the exposed surface, and last, SiO2 film 9 is utilized to provided electrodes 10 and 11.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1425478A JPS54107286A (en) | 1978-02-10 | 1978-02-10 | Production of semiconductor junction laser element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1425478A JPS54107286A (en) | 1978-02-10 | 1978-02-10 | Production of semiconductor junction laser element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54107286A true JPS54107286A (en) | 1979-08-22 |
Family
ID=11855946
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1425478A Pending JPS54107286A (en) | 1978-02-10 | 1978-02-10 | Production of semiconductor junction laser element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54107286A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5648193A (en) * | 1979-09-18 | 1981-05-01 | Xerox Corp | Light controlled integrated current diode laser |
US4622673A (en) * | 1984-05-24 | 1986-11-11 | At&T Bell Laboratories | Heteroepitaxial ridge overgrown laser |
WO1990003055A1 (en) * | 1988-09-01 | 1990-03-22 | Seiko Epson Corporation | Light emitting device and method of producing the same |
-
1978
- 1978-02-10 JP JP1425478A patent/JPS54107286A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5648193A (en) * | 1979-09-18 | 1981-05-01 | Xerox Corp | Light controlled integrated current diode laser |
US4622673A (en) * | 1984-05-24 | 1986-11-11 | At&T Bell Laboratories | Heteroepitaxial ridge overgrown laser |
WO1990003055A1 (en) * | 1988-09-01 | 1990-03-22 | Seiko Epson Corporation | Light emitting device and method of producing the same |
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