JPS54141591A - Production of light emitting diode - Google Patents
Production of light emitting diodeInfo
- Publication number
- JPS54141591A JPS54141591A JP4955278A JP4955278A JPS54141591A JP S54141591 A JPS54141591 A JP S54141591A JP 4955278 A JP4955278 A JP 4955278A JP 4955278 A JP4955278 A JP 4955278A JP S54141591 A JPS54141591 A JP S54141591A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- substrate
- type gaas
- current limiting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To make the production of face emission type light emitting diodes of good heat radiation characteristics sure by introudcing selective etching techniques to the windowing process of current limiting layers and substrate removing process.
CONSTITUTION: An N type Ga1-xAlxAs layer 11, N type GaAs layer 12 and a P type Ga1-xAlxAs layer 13 and P type GaAs layer 14 which become current limiting layers are liquid phase epitaxially grown on an N type GaAs substrate 10. Next, a window is opened through selective etching in the central part of the layers 14 and 13, after which a Ga1-yAlyAs clad layer 15, P type GaAs active layer 16 and a P type Ga1-yAlyAs layer 17 which is made thick in order to maintain element strength sufficiently after when the substrate 10 is removed layer, and a P type GaAs layer 18 are epitaxially grown in lamination. Thereafter, a P type ohmic electrode 19 is evaporated on the layer 18 and a light taking-out window is opened in the central part thereof, thence the substrate 10 and layer 11 are etched away and an N type ohmic electrode 20 is evaporated on the exposed layer 12. In this way, the light emission part of the active layer is positioned in the hole of the current limiting layers, whereby the spreading of light emission is suppressed.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53049552A JPS5936839B2 (en) | 1978-04-25 | 1978-04-25 | Manufacturing method of light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53049552A JPS5936839B2 (en) | 1978-04-25 | 1978-04-25 | Manufacturing method of light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54141591A true JPS54141591A (en) | 1979-11-02 |
| JPS5936839B2 JPS5936839B2 (en) | 1984-09-06 |
Family
ID=12834348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53049552A Expired JPS5936839B2 (en) | 1978-04-25 | 1978-04-25 | Manufacturing method of light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5936839B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57133686A (en) * | 1981-02-12 | 1982-08-18 | Sharp Corp | Semiconductor light emitting element and manufacture thereof |
| JPS5834986A (en) * | 1981-08-27 | 1983-03-01 | Sharp Corp | Manufacture of light emitting device |
-
1978
- 1978-04-25 JP JP53049552A patent/JPS5936839B2/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57133686A (en) * | 1981-02-12 | 1982-08-18 | Sharp Corp | Semiconductor light emitting element and manufacture thereof |
| JPS6244834B2 (en) * | 1981-02-12 | 1987-09-22 | Sharp Kk | |
| JPS5834986A (en) * | 1981-08-27 | 1983-03-01 | Sharp Corp | Manufacture of light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5936839B2 (en) | 1984-09-06 |
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