JPS5548990A - Semiconductor joining laser forming method - Google Patents
Semiconductor joining laser forming methodInfo
- Publication number
- JPS5548990A JPS5548990A JP11679078A JP11679078A JPS5548990A JP S5548990 A JPS5548990 A JP S5548990A JP 11679078 A JP11679078 A JP 11679078A JP 11679078 A JP11679078 A JP 11679078A JP S5548990 A JPS5548990 A JP S5548990A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- growth
- epi
- piled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain a high-conversion-efficiency semiconductor joining laser by enclosing an activation layer with low-reflectivity substances completely.
CONSTITUTION: An n-type Al0.3Ga0.7As 10, a GaAs 11 and a p-type Al0.3Ga0.7As 12 are piled on an n-type GaAs 9 in layers and the layer 12 is provided with grooves having a width of 20μm and reaching the layer 11. And the layer 11 is melt-backed, it is stopped when reached the layer 10's surface, and a p-type Al0.3Ga0.7Al 13 and an n-type Al0.3Ga0.7As 14 are piled in layers. By using a constant growth temperature and a constant cooling speed, crystal surface is flattened. Since epi-growth does not occur on the surface of AlGaAs which has been once aerated, no growth layer is formed on the layer 12 by the 2nd epi-formation. And then, electrodes 18 and 19 are prepared. When the groove width is less than 100μm, an embedded type jointing laser can be easily formed with high reproducibility and recovery, and if the electrode 18 is positive, the most part of the current needed for radiation of the activation layer is caught by the layer 15, conversion efficiency is heightened.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11679078A JPS5548990A (en) | 1978-09-21 | 1978-09-21 | Semiconductor joining laser forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11679078A JPS5548990A (en) | 1978-09-21 | 1978-09-21 | Semiconductor joining laser forming method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5548990A true JPS5548990A (en) | 1980-04-08 |
JPS6118877B2 JPS6118877B2 (en) | 1986-05-14 |
Family
ID=14695752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11679078A Granted JPS5548990A (en) | 1978-09-21 | 1978-09-21 | Semiconductor joining laser forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5548990A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5864086A (en) * | 1981-10-13 | 1983-04-16 | Nec Corp | Buried hetero semiconductor laser |
JPS5882589A (en) * | 1981-11-12 | 1983-05-18 | Nec Corp | Semiconductor laser |
-
1978
- 1978-09-21 JP JP11679078A patent/JPS5548990A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5864086A (en) * | 1981-10-13 | 1983-04-16 | Nec Corp | Buried hetero semiconductor laser |
JPS627719B2 (en) * | 1981-10-13 | 1987-02-18 | Nippon Electric Co | |
JPS5882589A (en) * | 1981-11-12 | 1983-05-18 | Nec Corp | Semiconductor laser |
Also Published As
Publication number | Publication date |
---|---|
JPS6118877B2 (en) | 1986-05-14 |
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