JPS5548990A - Semiconductor joining laser forming method - Google Patents

Semiconductor joining laser forming method

Info

Publication number
JPS5548990A
JPS5548990A JP11679078A JP11679078A JPS5548990A JP S5548990 A JPS5548990 A JP S5548990A JP 11679078 A JP11679078 A JP 11679078A JP 11679078 A JP11679078 A JP 11679078A JP S5548990 A JPS5548990 A JP S5548990A
Authority
JP
Japan
Prior art keywords
layer
type
growth
epi
piled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11679078A
Other languages
Japanese (ja)
Other versions
JPS6118877B2 (en
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11679078A priority Critical patent/JPS5548990A/en
Publication of JPS5548990A publication Critical patent/JPS5548990A/en
Publication of JPS6118877B2 publication Critical patent/JPS6118877B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a high-conversion-efficiency semiconductor joining laser by enclosing an activation layer with low-reflectivity substances completely.
CONSTITUTION: An n-type Al0.3Ga0.7As 10, a GaAs 11 and a p-type Al0.3Ga0.7As 12 are piled on an n-type GaAs 9 in layers and the layer 12 is provided with grooves having a width of 20μm and reaching the layer 11. And the layer 11 is melt-backed, it is stopped when reached the layer 10's surface, and a p-type Al0.3Ga0.7Al 13 and an n-type Al0.3Ga0.7As 14 are piled in layers. By using a constant growth temperature and a constant cooling speed, crystal surface is flattened. Since epi-growth does not occur on the surface of AlGaAs which has been once aerated, no growth layer is formed on the layer 12 by the 2nd epi-formation. And then, electrodes 18 and 19 are prepared. When the groove width is less than 100μm, an embedded type jointing laser can be easily formed with high reproducibility and recovery, and if the electrode 18 is positive, the most part of the current needed for radiation of the activation layer is caught by the layer 15, conversion efficiency is heightened.
COPYRIGHT: (C)1980,JPO&Japio
JP11679078A 1978-09-21 1978-09-21 Semiconductor joining laser forming method Granted JPS5548990A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11679078A JPS5548990A (en) 1978-09-21 1978-09-21 Semiconductor joining laser forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11679078A JPS5548990A (en) 1978-09-21 1978-09-21 Semiconductor joining laser forming method

Publications (2)

Publication Number Publication Date
JPS5548990A true JPS5548990A (en) 1980-04-08
JPS6118877B2 JPS6118877B2 (en) 1986-05-14

Family

ID=14695752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11679078A Granted JPS5548990A (en) 1978-09-21 1978-09-21 Semiconductor joining laser forming method

Country Status (1)

Country Link
JP (1) JPS5548990A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864086A (en) * 1981-10-13 1983-04-16 Nec Corp Buried hetero semiconductor laser
JPS5882589A (en) * 1981-11-12 1983-05-18 Nec Corp Semiconductor laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864086A (en) * 1981-10-13 1983-04-16 Nec Corp Buried hetero semiconductor laser
JPS627719B2 (en) * 1981-10-13 1987-02-18 Nippon Electric Co
JPS5882589A (en) * 1981-11-12 1983-05-18 Nec Corp Semiconductor laser

Also Published As

Publication number Publication date
JPS6118877B2 (en) 1986-05-14

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