JPS6486585A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS6486585A
JPS6486585A JP24497987A JP24497987A JPS6486585A JP S6486585 A JPS6486585 A JP S6486585A JP 24497987 A JP24497987 A JP 24497987A JP 24497987 A JP24497987 A JP 24497987A JP S6486585 A JPS6486585 A JP S6486585A
Authority
JP
Japan
Prior art keywords
face
active layer
curved
around
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24497987A
Other languages
Japanese (ja)
Inventor
Tomohiko Yoshida
Taiji Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP24497987A priority Critical patent/JPS6486585A/en
Publication of JPS6486585A publication Critical patent/JPS6486585A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent beam absorption around end faces from occurring, and operate at high output stably for a long period by providing a structure wherein an active layer is laminated with curvature at an end face in the vicinity of an end face of beam irradiation at least of one side, and only the curved end domain of the active layer of at least the one side is removed. CONSTITUTION:GaAlAs active layer 4, N-type GaAlAs clad layer 5 and N-type GaAs cap layer 6 are sequentially formed to growth. The active layer 4 is curved at a channel 9. Electrodes 10, 11 are deposited on the outer surface, the wafer is cleaved at about the center of the channel 9 to form an end face of one side, the other end face is cleaved into an appropriate length for resonance, to obtain separated elements. The end face of the side of the curved active layer is etched and the curved portion of the active layer 4 is removed. In a multiple structure, beam is confined in the active layer 4 of a great refractive index, but the active layer in the device is cut around the end face, hence a beam coming in straighly is radiated in the clad layer 5 around the end face. Consequently, the beam is not absorbed around the end face, and a stable operation is assured at a high output for a long time.
JP24497987A 1987-09-28 1987-09-28 Semiconductor laser element Pending JPS6486585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24497987A JPS6486585A (en) 1987-09-28 1987-09-28 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24497987A JPS6486585A (en) 1987-09-28 1987-09-28 Semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS6486585A true JPS6486585A (en) 1989-03-31

Family

ID=17126789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24497987A Pending JPS6486585A (en) 1987-09-28 1987-09-28 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS6486585A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608750A (en) * 1993-07-29 1997-03-04 Hitachi, Ltd. Semiconductor laser device and a method for the manufacture thereof
JP2013191622A (en) * 2012-03-12 2013-09-26 Mitsubishi Electric Corp Semiconductor light-emitting element and manufacturing method of the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608750A (en) * 1993-07-29 1997-03-04 Hitachi, Ltd. Semiconductor laser device and a method for the manufacture thereof
JP2013191622A (en) * 2012-03-12 2013-09-26 Mitsubishi Electric Corp Semiconductor light-emitting element and manufacturing method of the same

Similar Documents

Publication Publication Date Title
JPS57176785A (en) Semiconductor laser device
CA1241101A (en) Semiconductor laser having a non-absorbing passive region with beam guiding
JPS6486585A (en) Semiconductor laser element
JPS6482587A (en) Quantum well type semiconductor laser
JPS5766685A (en) Rib structure semiconductor laser
JPS57162382A (en) Semiconductor laser
JPS5727092A (en) Semiconductor laser device
JPS648691A (en) Integrated semiconductor laser element
JPS5691490A (en) Semiconductor laser element
JPS6482590A (en) Manufacture of semiconductor device
JPS5736882A (en) Stripe type double hetero junction laser element
JPS5673485A (en) Semiconductor luminous element
JPS6477188A (en) Semiconductor laser
JPS6453487A (en) Semiconductor laser device
JPS5712590A (en) Buried type double heterojunction laser element
JPS5696889A (en) Semiconductor light emitting device
JPS57157587A (en) Semiconductor laser device
JPS6435980A (en) Planar semiconductor laser
JPS5712587A (en) Hetero-structure semiconductor laser
JPS6449295A (en) Semiconductor laser device
JPS5780789A (en) Semiconductor laser device
JPS5643790A (en) Semiconductor laser
JPS5721884A (en) Semiconductor laser
JPS56112783A (en) Semiconductor laser
JPS6482686A (en) Semiconductor laser