JPS6486585A - Semiconductor laser element - Google Patents
Semiconductor laser elementInfo
- Publication number
- JPS6486585A JPS6486585A JP24497987A JP24497987A JPS6486585A JP S6486585 A JPS6486585 A JP S6486585A JP 24497987 A JP24497987 A JP 24497987A JP 24497987 A JP24497987 A JP 24497987A JP S6486585 A JPS6486585 A JP S6486585A
- Authority
- JP
- Japan
- Prior art keywords
- face
- active layer
- curved
- around
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To prevent beam absorption around end faces from occurring, and operate at high output stably for a long period by providing a structure wherein an active layer is laminated with curvature at an end face in the vicinity of an end face of beam irradiation at least of one side, and only the curved end domain of the active layer of at least the one side is removed. CONSTITUTION:GaAlAs active layer 4, N-type GaAlAs clad layer 5 and N-type GaAs cap layer 6 are sequentially formed to growth. The active layer 4 is curved at a channel 9. Electrodes 10, 11 are deposited on the outer surface, the wafer is cleaved at about the center of the channel 9 to form an end face of one side, the other end face is cleaved into an appropriate length for resonance, to obtain separated elements. The end face of the side of the curved active layer is etched and the curved portion of the active layer 4 is removed. In a multiple structure, beam is confined in the active layer 4 of a great refractive index, but the active layer in the device is cut around the end face, hence a beam coming in straighly is radiated in the clad layer 5 around the end face. Consequently, the beam is not absorbed around the end face, and a stable operation is assured at a high output for a long time.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24497987A JPS6486585A (en) | 1987-09-28 | 1987-09-28 | Semiconductor laser element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24497987A JPS6486585A (en) | 1987-09-28 | 1987-09-28 | Semiconductor laser element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6486585A true JPS6486585A (en) | 1989-03-31 |
Family
ID=17126789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24497987A Pending JPS6486585A (en) | 1987-09-28 | 1987-09-28 | Semiconductor laser element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6486585A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5608750A (en) * | 1993-07-29 | 1997-03-04 | Hitachi, Ltd. | Semiconductor laser device and a method for the manufacture thereof |
JP2013191622A (en) * | 2012-03-12 | 2013-09-26 | Mitsubishi Electric Corp | Semiconductor light-emitting element and manufacturing method of the same |
-
1987
- 1987-09-28 JP JP24497987A patent/JPS6486585A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5608750A (en) * | 1993-07-29 | 1997-03-04 | Hitachi, Ltd. | Semiconductor laser device and a method for the manufacture thereof |
JP2013191622A (en) * | 2012-03-12 | 2013-09-26 | Mitsubishi Electric Corp | Semiconductor light-emitting element and manufacturing method of the same |
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