JPS5696889A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS5696889A
JPS5696889A JP17119279A JP17119279A JPS5696889A JP S5696889 A JPS5696889 A JP S5696889A JP 17119279 A JP17119279 A JP 17119279A JP 17119279 A JP17119279 A JP 17119279A JP S5696889 A JPS5696889 A JP S5696889A
Authority
JP
Japan
Prior art keywords
clad
layer
gaas
constitution
even though
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17119279A
Other languages
Japanese (ja)
Inventor
Katsuto Shima
Hiroshi Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17119279A priority Critical patent/JPS5696889A/en
Publication of JPS5696889A publication Critical patent/JPS5696889A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To control the lateral mode effectively even though the difference in the refractive index with an active layer is small, by separating the wave guide part and absorbing part of a clad layer. CONSTITUTION:A groove 11A whose depth and width are about 1mum is formed in GaAs 11 having a face index of (100) in the direction of <110>. A Ga0.4Al0.6As clad layer 12 is epitaxially grown in a liquid phase and embedded. Ga0.6Al0.4As 13, Ga0.8Al0.2As 14, Ga0.4Al0.6As 15, GaAs 16 are layered, an electrode is attached, and the work is finished. In this constitution, the refractive index of the clad 13 is larger than that of the active layer 14 by only about 0.2. Even though the thickness of the layer 14 is about 0.15mum, light is sufficiently absorbed by the substrate 11 but not absorbed in the groove owing to the presence of the clad 12. Therefore, the light is conducted and laser oscillation is obtained in a resonator whose length is 250mum in the single lateral mode at the threshold value of about 150mA.
JP17119279A 1979-12-29 1979-12-29 Semiconductor light emitting device Pending JPS5696889A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17119279A JPS5696889A (en) 1979-12-29 1979-12-29 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17119279A JPS5696889A (en) 1979-12-29 1979-12-29 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS5696889A true JPS5696889A (en) 1981-08-05

Family

ID=15918708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17119279A Pending JPS5696889A (en) 1979-12-29 1979-12-29 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5696889A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0342983A2 (en) * 1988-05-18 1989-11-23 Sharp Kabushiki Kaisha A semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0342983A2 (en) * 1988-05-18 1989-11-23 Sharp Kabushiki Kaisha A semiconductor laser device

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