JPS5696890A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS5696890A
JPS5696890A JP17119979A JP17119979A JPS5696890A JP S5696890 A JPS5696890 A JP S5696890A JP 17119979 A JP17119979 A JP 17119979A JP 17119979 A JP17119979 A JP 17119979A JP S5696890 A JPS5696890 A JP S5696890A
Authority
JP
Japan
Prior art keywords
active layer
type
emitting device
type inp
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17119979A
Other languages
Japanese (ja)
Other versions
JPS5855674B2 (en
Inventor
Hajime Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP54171199A priority Critical patent/JPS5855674B2/en
Publication of JPS5696890A publication Critical patent/JPS5696890A/en
Publication of JPS5855674B2 publication Critical patent/JPS5855674B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain the light emitting device having a low threshold value and a stable lateral mode by inflating the stripe center of an active layer, and providing a low refractive index layer with the large energy gap on the side. CONSTITUTION:A groove 2' whose width is about 1mum and depth is about 0.2mum is provided in an N type InP substrate 1 by a photoetching method, and an InGa AsP active layer 2 is layered. Furthermore, P type InP 3 and P type InGaAsP 4 are stacked, the mesa etching is performed to the depth reaching the substrate 1, a highly resistive N type InP 5 is embeded, and a low refractive index layer 5 is formed. Thereafter, electrodes 6 and 7 are attached as usual. In this constitution, the threshold value is as low as that of conventional embedded type, the lateral mode is stable, and the large light output can be obtained by the swelling of the active layer.
JP54171199A 1979-12-29 1979-12-29 Method for manufacturing semiconductor light emitting device Expired JPS5855674B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54171199A JPS5855674B2 (en) 1979-12-29 1979-12-29 Method for manufacturing semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54171199A JPS5855674B2 (en) 1979-12-29 1979-12-29 Method for manufacturing semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPS5696890A true JPS5696890A (en) 1981-08-05
JPS5855674B2 JPS5855674B2 (en) 1983-12-10

Family

ID=15918846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54171199A Expired JPS5855674B2 (en) 1979-12-29 1979-12-29 Method for manufacturing semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5855674B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0198656A2 (en) * 1985-04-11 1986-10-22 Sharp Kabushiki Kaisha A semiconductor laser device
EP0205338A2 (en) * 1985-06-11 1986-12-17 Sharp Kabushiki Kaisha Semiconductor laser device
EP0209372A2 (en) * 1985-07-17 1987-01-21 Sharp Kabushiki Kaisha A semiconductor laser device
EP0264225A2 (en) * 1986-10-07 1988-04-20 Sharp Kabushiki Kaisha A semiconductor laser device and a method for the production of the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0198656A2 (en) * 1985-04-11 1986-10-22 Sharp Kabushiki Kaisha A semiconductor laser device
US4754462A (en) * 1985-04-11 1988-06-28 Sharp Kabushiki Kaisha Semiconductor laser device with a V-channel and a mesa
EP0205338A2 (en) * 1985-06-11 1986-12-17 Sharp Kabushiki Kaisha Semiconductor laser device
US4819244A (en) * 1985-06-11 1989-04-04 Sharp Kabushiki Kaisha Semiconductor laser device
EP0209372A2 (en) * 1985-07-17 1987-01-21 Sharp Kabushiki Kaisha A semiconductor laser device
EP0264225A2 (en) * 1986-10-07 1988-04-20 Sharp Kabushiki Kaisha A semiconductor laser device and a method for the production of the same

Also Published As

Publication number Publication date
JPS5855674B2 (en) 1983-12-10

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