JPS6428987A - Semiconductor laser - Google Patents

Abstract

PURPOSE:To obtain a semiconductor laser which is not damaged in a section even by a higher optical output than a conventional one by providing clad layers in contact with an active layer so that the refractive index of one active layer is larger than that of the other, and making a larger amount of laser radiation ooze out to the clad layer having the larger refractive index as compared with the other clad layer having the smaller refractive index. CONSTITUTION:An N-type Al0.55Ga0.45As first clad layer 2 having 2mum or thickness, an Al0.15Ga0.85As active layer 3 having 300 Angstroms, a P-type Al0.45Ga0.55 second clad layer 4 having 0.6mum of thickness, and an N-type GaAs current blocking layer 5 are sequentially laminated on an N-type GaAs substrate 1, and a groove 6 which penetrates the layer 5 is formed. The width in the bottom of the groove is 3-5mum. Thereafter, a P-type Al0.45Ga0.55As third clad layer 7 having 0.4mum of thickness, a P-type Al0.5Ga0.5As fourth clad layer 8 having 1mum of thickness, and a P-type GaAs layer 9 are sequentially formed, and a P-type electrode 10, and an N-type electrode 11 are eventually formed to complete a semiconductor laser.