JPS5617093A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5617093A
JPS5617093A JP9295479A JP9295479A JPS5617093A JP S5617093 A JPS5617093 A JP S5617093A JP 9295479 A JP9295479 A JP 9295479A JP 9295479 A JP9295479 A JP 9295479A JP S5617093 A JPS5617093 A JP S5617093A
Authority
JP
Japan
Prior art keywords
layer
carrier
active layer
refractive index
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9295479A
Other languages
Japanese (ja)
Other versions
JPS6154279B2 (en
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9295479A priority Critical patent/JPS5617093A/en
Publication of JPS5617093A publication Critical patent/JPS5617093A/en
Publication of JPS6154279B2 publication Critical patent/JPS6154279B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Abstract

PURPOSE:To facilitate the oscillation of a fundamental mode and to turn out a high power by performing a mesa etching to the depth penetrating an active layer of a four-layer structure section having a light guiding layer and a carrier confinement layer. CONSTITUTION:A positive current is applied to a P-type electrode, a negative current is applied to an N-type electrode, a carrier is injected into an active layer 14 and a luminescence is obtained by recombination. The injected carrier is confined by the semiconductor layers 13 and 15 located in the vicinity of the active layer. When a gain surpasses a loss with a sufficient application of current, a laser beam is generated from the active layer 14. This beam oozes out to a beam guide layer 13 and is guided by a beam confinement layer 12 having a low refractive index and a beam- carrier confinement layer 15. As the thickness of a central part 20 of a guide layer 13 differs from that of its outside, the lateral refractive index distribution becomes larger as compared with the central part. In other words, it means that a beam waveguide mechanism is fabricated in a luminous region and the fundamental mode confined within said region is oscillated to the lateral direction, too. The fact that the lateral direction of the active layer has a mesa etching in a striped form shows that the diffusion of the carrier is limited within the mesa-type protruded section only.
JP9295479A 1979-07-20 1979-07-20 Semiconductor laser Granted JPS5617093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9295479A JPS5617093A (en) 1979-07-20 1979-07-20 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9295479A JPS5617093A (en) 1979-07-20 1979-07-20 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5617093A true JPS5617093A (en) 1981-02-18
JPS6154279B2 JPS6154279B2 (en) 1986-11-21

Family

ID=14068843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9295479A Granted JPS5617093A (en) 1979-07-20 1979-07-20 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5617093A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236189A (en) * 1985-04-11 1986-10-21 Sharp Corp Semiconductor laser element
EP0209372A2 (en) * 1985-07-17 1987-01-21 Sharp Kabushiki Kaisha A semiconductor laser device
JPH01175738U (en) * 1988-05-30 1989-12-14

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236189A (en) * 1985-04-11 1986-10-21 Sharp Corp Semiconductor laser element
EP0198656A2 (en) * 1985-04-11 1986-10-22 Sharp Kabushiki Kaisha A semiconductor laser device
US4754462A (en) * 1985-04-11 1988-06-28 Sharp Kabushiki Kaisha Semiconductor laser device with a V-channel and a mesa
EP0209372A2 (en) * 1985-07-17 1987-01-21 Sharp Kabushiki Kaisha A semiconductor laser device
JPH01175738U (en) * 1988-05-30 1989-12-14
JPH0440600Y2 (en) * 1988-05-30 1992-09-24

Also Published As

Publication number Publication date
JPS6154279B2 (en) 1986-11-21

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