JPS5681993A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS5681993A
JPS5681993A JP15911779A JP15911779A JPS5681993A JP S5681993 A JPS5681993 A JP S5681993A JP 15911779 A JP15911779 A JP 15911779A JP 15911779 A JP15911779 A JP 15911779A JP S5681993 A JPS5681993 A JP S5681993A
Authority
JP
Japan
Prior art keywords
layer
region
active
clad layer
laser light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15911779A
Other languages
Japanese (ja)
Other versions
JPH0211024B2 (en
Inventor
Junichi Umeda
Takashi Kajimura
Takaro Kuroda
Shigeo Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15911779A priority Critical patent/JPS5681993A/en
Publication of JPS5681993A publication Critical patent/JPS5681993A/en
Publication of JPH0211024B2 publication Critical patent/JPH0211024B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a large power semiconductor laser having uniform phase of laser light in every stripe by forming of a crystal substrate, a buffer layer, an active layer, a clad layer, a stripe region and upper and lower metal electrodes. CONSTITUTION:When predetermined bias current is flowed between the electrodes with the upper electrode positive, a current will flow in a circuit of an upper electrode, a stribe region 16, a clad layer 14, an active layer 13, a clad layer 12, a substrate 11 and a lower electrode (not shown). Accordingly, the current will flow mainly through the active region 131 of the active layer 13 confronting the stripe region 16. Consequently, the resonance laser light can be obtained in the active region 131, the light is enclosed optically or electromagnetically by the clad layer 14 and the buffer layer 12 of different refractive indexes, is reciprocated between the mirror surfaces 18, and after sufficient energy is obtained, radiating laser light 19 is irradiated externally from the mirror surface 18.
JP15911779A 1979-12-10 1979-12-10 Semiconductor laser element Granted JPS5681993A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15911779A JPS5681993A (en) 1979-12-10 1979-12-10 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15911779A JPS5681993A (en) 1979-12-10 1979-12-10 Semiconductor laser element

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP63175022A Division JPH01199486A (en) 1988-07-15 1988-07-15 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS5681993A true JPS5681993A (en) 1981-07-04
JPH0211024B2 JPH0211024B2 (en) 1990-03-12

Family

ID=15686603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15911779A Granted JPS5681993A (en) 1979-12-10 1979-12-10 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5681993A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130090A (en) * 1984-07-20 1986-02-12 Nec Corp Semiconductor laser
JPS6142980A (en) * 1984-08-06 1986-03-01 Sharp Corp Semiconductor laser array device
JPS61102087A (en) * 1984-10-25 1986-05-20 Sharp Corp Semiconductor laser device
JPS61163687A (en) * 1985-01-12 1986-07-24 Sharp Corp Semiconductor laser array device
JPS61164292A (en) * 1985-01-16 1986-07-24 Sharp Corp Semiconductor laser array device
JPS61225887A (en) * 1985-03-29 1986-10-07 Sharp Corp Semiconductor laser array device
US4718069A (en) * 1986-10-27 1988-01-05 Spectra Diode Laboratories, Inc. Semiconductor laser array with single lobed output
JPS6396987A (en) * 1986-10-14 1988-04-27 Sony Corp Semiconductor laser
EP1139527A2 (en) * 2000-03-27 2001-10-04 Matsushita Electric Industrial Co., Ltd. High power semiconductor laser array apparatus
EP2671294A2 (en) * 2011-01-31 2013-12-11 Technische Universität Berlin Device comprising a laser

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130090A (en) * 1984-07-20 1986-02-12 Nec Corp Semiconductor laser
JPS6142980A (en) * 1984-08-06 1986-03-01 Sharp Corp Semiconductor laser array device
JPS61102087A (en) * 1984-10-25 1986-05-20 Sharp Corp Semiconductor laser device
JPH0439797B2 (en) * 1985-01-12 1992-06-30
JPS61163687A (en) * 1985-01-12 1986-07-24 Sharp Corp Semiconductor laser array device
JPS61164292A (en) * 1985-01-16 1986-07-24 Sharp Corp Semiconductor laser array device
JPS61225887A (en) * 1985-03-29 1986-10-07 Sharp Corp Semiconductor laser array device
JPS6396987A (en) * 1986-10-14 1988-04-27 Sony Corp Semiconductor laser
US4718069A (en) * 1986-10-27 1988-01-05 Spectra Diode Laboratories, Inc. Semiconductor laser array with single lobed output
EP1139527A2 (en) * 2000-03-27 2001-10-04 Matsushita Electric Industrial Co., Ltd. High power semiconductor laser array apparatus
EP1139527A3 (en) * 2000-03-27 2003-04-23 Matsushita Electric Industrial Co., Ltd. High power semiconductor laser array apparatus
EP2671294A2 (en) * 2011-01-31 2013-12-11 Technische Universität Berlin Device comprising a laser
EP2671294B1 (en) * 2011-01-31 2023-11-29 Technische Universität Berlin Device comprising a laser

Also Published As

Publication number Publication date
JPH0211024B2 (en) 1990-03-12

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