JPS5654083A - Semiconductor laser apparatus - Google Patents

Semiconductor laser apparatus

Info

Publication number
JPS5654083A
JPS5654083A JP12920779A JP12920779A JPS5654083A JP S5654083 A JPS5654083 A JP S5654083A JP 12920779 A JP12920779 A JP 12920779A JP 12920779 A JP12920779 A JP 12920779A JP S5654083 A JPS5654083 A JP S5654083A
Authority
JP
Japan
Prior art keywords
layers
layer
refractive index
those
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12920779A
Other languages
Japanese (ja)
Other versions
JPS6237834B2 (en
Inventor
Isao Hino
Kuniaki Iwamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12920779A priority Critical patent/JPS5654083A/en
Publication of JPS5654083A publication Critical patent/JPS5654083A/en
Publication of JPS6237834B2 publication Critical patent/JPS6237834B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To stabilize an oscillation of laser by a method wherein lights generated by generating laser are made up in monolithic type and phase-coupled with a three dimensional passive light transmission path, while a laser oscillating section is also provided with an effective refractive index difference and given a feeble light transmitting function in horizontal-transverse direction. CONSTITUTION:On an n-GaAs substrate 11, the first semiconductor layer 12 is formed and in succession, the second P type or n type semiconductor layer 13 is formed and further, third, forth and fifth n type semiconductor layers 14, 15, 16 are formed by turns to make up a semiconductor multilayer film. The refractive index of the layer 13 is made larger than those of the layers 12, 14; an energy gap of the layer 13 is made smaller than those of the layers 12, 14, and an active transmission path with a double heterostructure is formed with the layers 12, 13 and 14. Moreover, the refractive index of the layer 15 is made larger than those of the layers 14, 16; a passive path with a double hetero-structure is formed; the passive path is formed of a mesa-structure extending in stripe state in the direction in which the multilayer film is formed and the vertical direction. The both sides of the mesa are made the hetero-structural transmission paths covered with a sixth P type semiconductor layer 17 which is smaller than that of the layer 15 in the refractive index, and given feeble light functions in horizontal and transverse directions.
JP12920779A 1979-10-05 1979-10-05 Semiconductor laser apparatus Granted JPS5654083A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12920779A JPS5654083A (en) 1979-10-05 1979-10-05 Semiconductor laser apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12920779A JPS5654083A (en) 1979-10-05 1979-10-05 Semiconductor laser apparatus

Publications (2)

Publication Number Publication Date
JPS5654083A true JPS5654083A (en) 1981-05-13
JPS6237834B2 JPS6237834B2 (en) 1987-08-14

Family

ID=15003775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12920779A Granted JPS5654083A (en) 1979-10-05 1979-10-05 Semiconductor laser apparatus

Country Status (1)

Country Link
JP (1) JPS5654083A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6079785A (en) * 1983-10-06 1985-05-07 Agency Of Ind Science & Technol Semiconductor laser device
JPS61194788A (en) * 1985-02-22 1986-08-29 Toshiba Corp Semiconductor light-emitting element and manufacture thereof
FR2628891A1 (en) * 1988-03-16 1989-09-22 Mitsubishi Electric Corp SEMICONDUCTOR LASER
EP0353033A2 (en) * 1988-07-25 1990-01-31 Kabushiki Kaisha Toshiba Rib waveguide type semiconductor laser
EP0408373A2 (en) * 1989-07-12 1991-01-16 Kabushiki Kaisha Toshiba Transverse-mode oscillation semiconductor laser device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5088989A (en) * 1973-12-10 1975-07-17
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS5493381A (en) * 1977-12-30 1979-07-24 Fujitsu Ltd Semiconductor light emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5088989A (en) * 1973-12-10 1975-07-17
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS5493381A (en) * 1977-12-30 1979-07-24 Fujitsu Ltd Semiconductor light emitting device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6079785A (en) * 1983-10-06 1985-05-07 Agency Of Ind Science & Technol Semiconductor laser device
JPH0462195B2 (en) * 1983-10-06 1992-10-05 Kogyo Gijutsuin
JPS61194788A (en) * 1985-02-22 1986-08-29 Toshiba Corp Semiconductor light-emitting element and manufacture thereof
JPH027196B2 (en) * 1985-02-22 1990-02-15 Tokyo Shibaura Electric Co
FR2628891A1 (en) * 1988-03-16 1989-09-22 Mitsubishi Electric Corp SEMICONDUCTOR LASER
EP0353033A2 (en) * 1988-07-25 1990-01-31 Kabushiki Kaisha Toshiba Rib waveguide type semiconductor laser
EP0408373A2 (en) * 1989-07-12 1991-01-16 Kabushiki Kaisha Toshiba Transverse-mode oscillation semiconductor laser device

Also Published As

Publication number Publication date
JPS6237834B2 (en) 1987-08-14

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