JPS561590A - Method of modulating semiconductor laser at high speed - Google Patents

Method of modulating semiconductor laser at high speed

Info

Publication number
JPS561590A
JPS561590A JP15833579A JP15833579A JPS561590A JP S561590 A JPS561590 A JP S561590A JP 15833579 A JP15833579 A JP 15833579A JP 15833579 A JP15833579 A JP 15833579A JP S561590 A JPS561590 A JP S561590A
Authority
JP
Japan
Prior art keywords
active layer
laser
semiconductor laser
high speed
modulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15833579A
Other languages
Japanese (ja)
Other versions
JPS5637716B2 (en
Inventor
Roi.Rangu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15833579A priority Critical patent/JPS561590A/en
Publication of JPS561590A publication Critical patent/JPS561590A/en
Publication of JPS5637716B2 publication Critical patent/JPS5637716B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4006—Injection locking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable high speed modulation in a semiconductor laser by dividing a multilayered semiconductor element containing active layer into two narrow grooves passing through the active layer at the center, exciting one with constant current and exicting the other with modulated current while implanting part of the output of one groove to the other. CONSTITUTION:Both end faces 5 of a multilayer architecture stripe type semiconductor laser element 1 containing active layer 6 are cut to be opened, and narrow groove 2 is formed into the substrate to pass through the active layer 6 in parallel with the end faces 5 at the center by an ion milling or the like to divide the active layer 6 into two. Then, independent electrodes 3 and 4 are formed on the upper surface corresponding to the respective active layers 6, and a heat sink operating also as a confronting electrode is adhered onto the back surface of the substrate. The laser element is thus constructed, one laser is excited with constant current, part of the power from this laser is implanted to the active layer 6 of the other laser, in which state the other laser is excited with modulated current to provide a modulated output having no waveform deterioration nor charging phenomenon.
JP15833579A 1979-12-06 1979-12-06 Method of modulating semiconductor laser at high speed Granted JPS561590A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15833579A JPS561590A (en) 1979-12-06 1979-12-06 Method of modulating semiconductor laser at high speed

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15833579A JPS561590A (en) 1979-12-06 1979-12-06 Method of modulating semiconductor laser at high speed

Publications (2)

Publication Number Publication Date
JPS561590A true JPS561590A (en) 1981-01-09
JPS5637716B2 JPS5637716B2 (en) 1981-09-02

Family

ID=15669384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15833579A Granted JPS561590A (en) 1979-12-06 1979-12-06 Method of modulating semiconductor laser at high speed

Country Status (1)

Country Link
JP (1) JPS561590A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5007063A (en) * 1990-02-12 1991-04-09 Eastman Kodak Company Laser diode
US5729563A (en) * 1994-07-07 1998-03-17 Hewlett-Packard Company Method and apparatus for optically and thermally isolating surface emitting laser diodes
DE102022117503A1 (en) 2022-07-13 2024-01-18 Ams-Osram International Gmbh OPTOELECTRONIC SEMICONDUCTOR COMPONENT

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5990611U (en) * 1982-12-09 1984-06-19 藤浪　輝男 spring lock

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5007063A (en) * 1990-02-12 1991-04-09 Eastman Kodak Company Laser diode
US5729563A (en) * 1994-07-07 1998-03-17 Hewlett-Packard Company Method and apparatus for optically and thermally isolating surface emitting laser diodes
DE102022117503A1 (en) 2022-07-13 2024-01-18 Ams-Osram International Gmbh OPTOELECTRONIC SEMICONDUCTOR COMPONENT

Also Published As

Publication number Publication date
JPS5637716B2 (en) 1981-09-02

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