JPS57132384A - Semiconductor laser device and manufacture thereof - Google Patents

Semiconductor laser device and manufacture thereof

Info

Publication number
JPS57132384A
JPS57132384A JP1722681A JP1722681A JPS57132384A JP S57132384 A JPS57132384 A JP S57132384A JP 1722681 A JP1722681 A JP 1722681A JP 1722681 A JP1722681 A JP 1722681A JP S57132384 A JPS57132384 A JP S57132384A
Authority
JP
Japan
Prior art keywords
semiconductor
substrate
current
active layer
lamination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1722681A
Other languages
Japanese (ja)
Inventor
Shinichi Takahashi
Hideho Saito
Ganzo Iwane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1722681A priority Critical patent/JPS57132384A/en
Publication of JPS57132384A publication Critical patent/JPS57132384A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure

Abstract

PURPOSE:To realize a high-efficiency laser oscilation by a method wherein two semiconductor regins are sandwiched between a semiconductor substrate and a lamination and a semiconductor clad layer included in the laminatin is continuously connected to the semiconductor substrate via a narrow passage provided between the two semiconductor regions. CONSTITUTION:Two p type or high resistance semiconductor regions 21 and 22 not comtinuously connected with each other are insertedly provided on the main surface 1 consisting of (a) and (b) of a semiconductor substrate 2 between said substrate 2 and a lamination 7. Accordingly, a current in an active layer 4 running from the clad layer 3 of the lamination 7 to the substrate 2 is provided with a surface (c) that is the only virtual passage for the current. The current in the active layer 4 is narrowed down when it leaves the active layer 4 toward the substrate 2 and the current running into the active layer 4 from the both sides thereof is also narrowed down. This setup results in a remarkably improved laser oscillation efficiency compared with a conventional setup.
JP1722681A 1981-02-06 1981-02-06 Semiconductor laser device and manufacture thereof Pending JPS57132384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1722681A JPS57132384A (en) 1981-02-06 1981-02-06 Semiconductor laser device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1722681A JPS57132384A (en) 1981-02-06 1981-02-06 Semiconductor laser device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57132384A true JPS57132384A (en) 1982-08-16

Family

ID=11938028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1722681A Pending JPS57132384A (en) 1981-02-06 1981-02-06 Semiconductor laser device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57132384A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60235486A (en) * 1984-05-08 1985-11-22 Matsushita Electric Ind Co Ltd Semiconductor laser device and manufacture thereof
JPS6136986A (en) * 1984-07-30 1986-02-21 Matsushita Electric Ind Co Ltd Semiconductor light emitting device
FR2693047A1 (en) * 1992-06-24 1993-12-31 Fujitsu Ltd Heterostructure semiconductor laser fabrication method with epitaxy on mesa patterned substrate - using epitaxial MOCVD growth of current stop gallium arsenide layer on sides of mesa stripe, with tri:methyl gallium as source gas

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105394A (en) * 1979-02-07 1980-08-12 Sharp Corp Stripe structure of semiconductor laser element and its manufacture
JPS55107291A (en) * 1979-02-09 1980-08-16 Sharp Corp Structure and manufacture of semiconductor laser element stripe

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105394A (en) * 1979-02-07 1980-08-12 Sharp Corp Stripe structure of semiconductor laser element and its manufacture
JPS55107291A (en) * 1979-02-09 1980-08-16 Sharp Corp Structure and manufacture of semiconductor laser element stripe

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60235486A (en) * 1984-05-08 1985-11-22 Matsushita Electric Ind Co Ltd Semiconductor laser device and manufacture thereof
JPS6136986A (en) * 1984-07-30 1986-02-21 Matsushita Electric Ind Co Ltd Semiconductor light emitting device
FR2693047A1 (en) * 1992-06-24 1993-12-31 Fujitsu Ltd Heterostructure semiconductor laser fabrication method with epitaxy on mesa patterned substrate - using epitaxial MOCVD growth of current stop gallium arsenide layer on sides of mesa stripe, with tri:methyl gallium as source gas
US5336635A (en) * 1992-06-24 1994-08-09 Fujitsu Limited Manufacturing method of semiconductor laser of patterned-substrate type
US5375136A (en) * 1992-06-24 1994-12-20 Fujitsu Limited Semiconductor laser of patterned-substrate type and structure thereof

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