JPS54141584A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS54141584A
JPS54141584A JP5035178A JP5035178A JPS54141584A JP S54141584 A JPS54141584 A JP S54141584A JP 5035178 A JP5035178 A JP 5035178A JP 5035178 A JP5035178 A JP 5035178A JP S54141584 A JPS54141584 A JP S54141584A
Authority
JP
Japan
Prior art keywords
layer
face
semiconductor substrate
constitution
side face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5035178A
Other languages
Japanese (ja)
Inventor
Hiroyasu Hagino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5035178A priority Critical patent/JPS54141584A/en
Publication of JPS54141584A publication Critical patent/JPS54141584A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To prevent braze material from creeping up to side face of pellet by so forming mesa grooves that they reach the semiconductor substrate of an SCR pellet from the main face on the opposite from the semiconductor substrate.
CONSTITUTION: A PB layer 3a and NB layer 2 are superposed on an N+ type substrate 4a and a P layer 1 is provided on the layer 2. From the main face on the P layer 1 side, mesa grooves are made and an insulation film 9 is made on the side wall face, thence electrodes 7, 8 are provided. According to this constitution, the side face is only the N layer 4a and there are no influences at all on the various characteristics such as reverse dielectric strength, etc. even if the braze material creeps up on the side face at the time of brazing the electrode 8 to the metal frame. Hence, the bonding conditions may be eased and the semiconductor substrate may be made thick, thus resulting in reduced cracking.
COPYRIGHT: (C)1979,JPO&Japio
JP5035178A 1978-04-26 1978-04-26 Thyristor Pending JPS54141584A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5035178A JPS54141584A (en) 1978-04-26 1978-04-26 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5035178A JPS54141584A (en) 1978-04-26 1978-04-26 Thyristor

Publications (1)

Publication Number Publication Date
JPS54141584A true JPS54141584A (en) 1979-11-02

Family

ID=12856478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5035178A Pending JPS54141584A (en) 1978-04-26 1978-04-26 Thyristor

Country Status (1)

Country Link
JP (1) JPS54141584A (en)

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