JPS5591132A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5591132A JPS5591132A JP16467878A JP16467878A JPS5591132A JP S5591132 A JPS5591132 A JP S5591132A JP 16467878 A JP16467878 A JP 16467878A JP 16467878 A JP16467878 A JP 16467878A JP S5591132 A JPS5591132 A JP S5591132A
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- electrode
- layer
- metal electrode
- low melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Die Bonding (AREA)
Abstract
PURPOSE: To obtain a connection layer free from deterioration by interposing a high melting point solder layer and a low melting point solder layer laminated between the metal electrode and the cathode terminal or the gate terminal in the order when the electrode provided on the semiconductor substrate is connected to the terminals.
CONSTITUTION: A cathode side circular metal electrode 12 and a gate metal electrode 14 surrounded thereby are formed on the surface of a semiconductor element 10 such as thyrister and triac of a center gate structure. Then, a cathode terminal 18 is soldered on the electrode 12 and a gate terminal 19 on the electrode 14. In this process, first, Pb-Ag-In high melting point solder layers 13 and 15 having the melting point of about 310°C are applied on the electrodes respectively at the thickness of 100W150 μm and then, Pb-Sn-Ag low melting point solder layers 17' and 17" having the melting point of 240W250°C are laminated thereon. The anode 11 is bonded on a radiator 16 through solder layer 17 having the same low melting point layer. With such an arrangement, there won't be thermal stress during the energization causing no separation between the electrodes.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16467878A JPS5591132A (en) | 1978-12-28 | 1978-12-28 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16467878A JPS5591132A (en) | 1978-12-28 | 1978-12-28 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5591132A true JPS5591132A (en) | 1980-07-10 |
Family
ID=15797755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16467878A Pending JPS5591132A (en) | 1978-12-28 | 1978-12-28 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5591132A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02277268A (en) * | 1989-04-18 | 1990-11-13 | Sharp Corp | Photo triac chip |
-
1978
- 1978-12-28 JP JP16467878A patent/JPS5591132A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02277268A (en) * | 1989-04-18 | 1990-11-13 | Sharp Corp | Photo triac chip |
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