JPS5591132A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5591132A
JPS5591132A JP16467878A JP16467878A JPS5591132A JP S5591132 A JPS5591132 A JP S5591132A JP 16467878 A JP16467878 A JP 16467878A JP 16467878 A JP16467878 A JP 16467878A JP S5591132 A JPS5591132 A JP S5591132A
Authority
JP
Japan
Prior art keywords
melting point
electrode
layer
metal electrode
low melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16467878A
Other languages
Japanese (ja)
Inventor
Shoji Takishima
Seiichi Miyagawa
Hiroshi Koike
Akio Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON INTERNATIONAL SEIRIYUUK
International Rectifier Corp Japan Ltd
Original Assignee
NIPPON INTERNATIONAL SEIRIYUUK
International Rectifier Corp Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON INTERNATIONAL SEIRIYUUK, International Rectifier Corp Japan Ltd filed Critical NIPPON INTERNATIONAL SEIRIYUUK
Priority to JP16467878A priority Critical patent/JPS5591132A/en
Publication of JPS5591132A publication Critical patent/JPS5591132A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain a connection layer free from deterioration by interposing a high melting point solder layer and a low melting point solder layer laminated between the metal electrode and the cathode terminal or the gate terminal in the order when the electrode provided on the semiconductor substrate is connected to the terminals.
CONSTITUTION: A cathode side circular metal electrode 12 and a gate metal electrode 14 surrounded thereby are formed on the surface of a semiconductor element 10 such as thyrister and triac of a center gate structure. Then, a cathode terminal 18 is soldered on the electrode 12 and a gate terminal 19 on the electrode 14. In this process, first, Pb-Ag-In high melting point solder layers 13 and 15 having the melting point of about 310°C are applied on the electrodes respectively at the thickness of 100W150 μm and then, Pb-Sn-Ag low melting point solder layers 17' and 17" having the melting point of 240W250°C are laminated thereon. The anode 11 is bonded on a radiator 16 through solder layer 17 having the same low melting point layer. With such an arrangement, there won't be thermal stress during the energization causing no separation between the electrodes.
COPYRIGHT: (C)1980,JPO&Japio
JP16467878A 1978-12-28 1978-12-28 Semiconductor device Pending JPS5591132A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16467878A JPS5591132A (en) 1978-12-28 1978-12-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16467878A JPS5591132A (en) 1978-12-28 1978-12-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5591132A true JPS5591132A (en) 1980-07-10

Family

ID=15797755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16467878A Pending JPS5591132A (en) 1978-12-28 1978-12-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5591132A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02277268A (en) * 1989-04-18 1990-11-13 Sharp Corp Photo triac chip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02277268A (en) * 1989-04-18 1990-11-13 Sharp Corp Photo triac chip

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