JPS5598835A - Pressure-welded semiconductor device - Google Patents

Pressure-welded semiconductor device

Info

Publication number
JPS5598835A
JPS5598835A JP589279A JP589279A JPS5598835A JP S5598835 A JPS5598835 A JP S5598835A JP 589279 A JP589279 A JP 589279A JP 589279 A JP589279 A JP 589279A JP S5598835 A JPS5598835 A JP S5598835A
Authority
JP
Japan
Prior art keywords
metal layer
electrode
substrate
molybdenum
lead conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP589279A
Other languages
Japanese (ja)
Other versions
JPS5936822B2 (en
Inventor
Tatsuo Miyajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP589279A priority Critical patent/JPS5936822B2/en
Publication of JPS5598835A publication Critical patent/JPS5598835A/en
Publication of JPS5936822B2 publication Critical patent/JPS5936822B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE: To prevent the fuse-bonding of metal layers and the deterioration of dielectric srength, by interposing a metal layer of 1600°C or more in melting point between another metal layer and an electrode provided on a diode substrate before pressure-welding an external lead conductor to the electrode through the latter metal layer.
CONSTITUTION: A substrate 2 made of molybdenum is fixed on an anode lead conductor 6 made of copper. A diode substrate 1 is bonded on the support plate 2 by a brazing material 3 so that the anode side of the substrate 1 is located face-down. An aluminum electrode 4 is fitted in ohmic contact with the cathode side 1b of the substrate. A cathode lead conductor 7 is pressure-welded to the aluminium electrode through a metal layer 5 of molybdenum, tungsten or the like. In that case, another metal layer 9 of molybdenum, tungsten, vanadium, rhodium, hafnium or the like, the melting point of which is not lower than 1600°C, is interposed between the electrode 4 and the metal layer 5. As a result, the metal layers 5, 9 are not fuse-bonded to each other in electrical current supply although their boundary surfaces become like mirror surfaces because of the difference between their thermal expansion coefficients. Therefore, the dielectric strength does not deteriorate.
COPYRIGHT: (C)1980,JPO&Japio
JP589279A 1979-01-19 1979-01-19 Pressure contact type semiconductor device Expired JPS5936822B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP589279A JPS5936822B2 (en) 1979-01-19 1979-01-19 Pressure contact type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP589279A JPS5936822B2 (en) 1979-01-19 1979-01-19 Pressure contact type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5598835A true JPS5598835A (en) 1980-07-28
JPS5936822B2 JPS5936822B2 (en) 1984-09-06

Family

ID=11623540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP589279A Expired JPS5936822B2 (en) 1979-01-19 1979-01-19 Pressure contact type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5936822B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180137A (en) * 1981-04-30 1982-11-06 Hitachi Ltd Semicondudtor device
JPS60145657A (en) * 1984-01-09 1985-08-01 Mitsubishi Electric Corp Semiconductor device
JPS61105849A (en) * 1984-10-30 1986-05-23 Internatl Rectifier Corp Japan Ltd Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180137A (en) * 1981-04-30 1982-11-06 Hitachi Ltd Semicondudtor device
JPS60145657A (en) * 1984-01-09 1985-08-01 Mitsubishi Electric Corp Semiconductor device
JPS61105849A (en) * 1984-10-30 1986-05-23 Internatl Rectifier Corp Japan Ltd Manufacture of semiconductor device
JPH0478171B2 (en) * 1984-10-30 1992-12-10 Nippon Inter Electronics Corp

Also Published As

Publication number Publication date
JPS5936822B2 (en) 1984-09-06

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