JPS5693172A - Bubble magnetic domain element of current access type - Google Patents

Bubble magnetic domain element of current access type

Info

Publication number
JPS5693172A
JPS5693172A JP16971479A JP16971479A JPS5693172A JP S5693172 A JPS5693172 A JP S5693172A JP 16971479 A JP16971479 A JP 16971479A JP 16971479 A JP16971479 A JP 16971479A JP S5693172 A JPS5693172 A JP S5693172A
Authority
JP
Japan
Prior art keywords
layer
current
magnetic field
access type
bias magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16971479A
Other languages
Japanese (ja)
Inventor
Haruo Urai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16971479A priority Critical patent/JPS5693172A/en
Publication of JPS5693172A publication Critical patent/JPS5693172A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the generated bias magnetic field component, by installing the bias magnetic field compensating conductor layers having a fixed width each in parallel at the driving layer of a current access type magnetic bubble memory and then applying the compensating current of a prescribed current density.
CONSTITUTION: The bias magnetic field compensating conductor layers 33 having a ratio of 5W20 to the width of the bubble driving conductor layer 31 are installed in parallel with an insulated gap secured inbetween at the both sides of the layer 31 of a current access type magnetic bubble memory at nearly the same level as the layer 31. Then the compensating current of a fixed direction and having a current density of a ratio of 1.5W4.5 to the current density of the access current of the layer 31 is applied to the layer 35. As a result, a large bias magnetic field component generated via the layer 31 can be reduced greatly to increase the working margin. Thus the area occupying the chip 1 is increased for the magnetic domain element.
COPYRIGHT: (C)1981,JPO&Japio
JP16971479A 1979-12-26 1979-12-26 Bubble magnetic domain element of current access type Pending JPS5693172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16971479A JPS5693172A (en) 1979-12-26 1979-12-26 Bubble magnetic domain element of current access type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16971479A JPS5693172A (en) 1979-12-26 1979-12-26 Bubble magnetic domain element of current access type

Publications (1)

Publication Number Publication Date
JPS5693172A true JPS5693172A (en) 1981-07-28

Family

ID=15891497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16971479A Pending JPS5693172A (en) 1979-12-26 1979-12-26 Bubble magnetic domain element of current access type

Country Status (1)

Country Link
JP (1) JPS5693172A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114190A (en) * 1980-02-15 1981-09-08 Nec Corp Current access type bubble magnetic-domain element
JPS5829189A (en) * 1981-08-13 1983-02-21 Nec Corp Unilayer conductor type current driving magnetic bubble element
JPS5857690A (en) * 1981-10-02 1983-04-05 Nec Corp Current driven magnetic bubble element of single layer conductor type

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114190A (en) * 1980-02-15 1981-09-08 Nec Corp Current access type bubble magnetic-domain element
JPS6252394B2 (en) * 1980-02-15 1987-11-05 Nippon Electric Co
JPS5829189A (en) * 1981-08-13 1983-02-21 Nec Corp Unilayer conductor type current driving magnetic bubble element
JPH0232707B2 (en) * 1981-08-13 1990-07-23 Nippon Electric Co
JPS5857690A (en) * 1981-10-02 1983-04-05 Nec Corp Current driven magnetic bubble element of single layer conductor type
JPH0313674B2 (en) * 1981-10-02 1991-02-25 Nippon Electric Co

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