JPS5782274A - Magnetic bubble memory element - Google Patents

Magnetic bubble memory element

Info

Publication number
JPS5782274A
JPS5782274A JP15812080A JP15812080A JPS5782274A JP S5782274 A JPS5782274 A JP S5782274A JP 15812080 A JP15812080 A JP 15812080A JP 15812080 A JP15812080 A JP 15812080A JP S5782274 A JPS5782274 A JP S5782274A
Authority
JP
Japan
Prior art keywords
bubble
layer
detector
pattern
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15812080A
Other languages
Japanese (ja)
Inventor
Hiroshi Inoue
Takeyasu Yanase
Seiichi Iwasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15812080A priority Critical patent/JPS5782274A/en
Publication of JPS5782274A publication Critical patent/JPS5782274A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0866—Detecting magnetic domains

Abstract

PURPOSE:To reduce noise due to stray capacity, by providing a conductor plane pattern for the lower layer of a bubble magnetic domain detector via an isolation layer. CONSTITUTION:In a magnetic bubble memory element forming a bubble stretcher 10 arranged with a number of chevron pattern 11 and a bubble magnetic domain detector 12 of serpentine type on a magnetic thin film of one axis anisotropy formed on a non-magnetic substrate, a conductor plane pattern 13 is formed on the lower layer of a bubble magnetic domain detector 12 via an isolating layer. The conductor pattern 13 is formed on the entire surface enclosing the detector. Since the conductor pattern 13 acts as a grounding layer, the noise due to stray capacity is reduced, and the layer constitution of a detector is thicken with the conductor pattern 13, the bias margin is improved.
JP15812080A 1980-11-12 1980-11-12 Magnetic bubble memory element Pending JPS5782274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15812080A JPS5782274A (en) 1980-11-12 1980-11-12 Magnetic bubble memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15812080A JPS5782274A (en) 1980-11-12 1980-11-12 Magnetic bubble memory element

Publications (1)

Publication Number Publication Date
JPS5782274A true JPS5782274A (en) 1982-05-22

Family

ID=15664730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15812080A Pending JPS5782274A (en) 1980-11-12 1980-11-12 Magnetic bubble memory element

Country Status (1)

Country Link
JP (1) JPS5782274A (en)

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